Ion beam irradiation of phase change materials: A route to material properties investigation and engineering

Privitera, S.; Rimini, E.

doi:10.1016/j.mssp.2021.106087

Cited by 8 publications

(6 citation statements)

References 57 publications

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“…Previous work has shown that by adjusting the ion dose implanted into c-GST the properties of the amorphized GST (such as the optical properties) can be tuned to match those of melt-quench a-GST. , The electrical measurements on the amorphized GST were performed a few days after amorphization on a time span of less than 1 h, so the drift effects are negligible.…”

Section: Methodsmentioning

confidence: 99%

Drift of Schottky Barrier Height in Phase Change Materials

Nir-Harwood,

Cohen,

Majumdar

et al. 2024

ACS Nano

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Phase-change memory (PCM) devices have great potential as multilevel memory cells and artificial synapses for neuromorphic computing hardware. However, their practical use is hampered by resistance drift, a phenomenon commonly attributed to structural relaxation or electronic mechanisms primarily in the context of bulk effects. In this study, we reevaluate the electrical manifestation of resistance drift in sub-100 nm Ge2Sb2Te5 (GST) PCM devices, focusing on the contributions of bulk vs interface effects. We employ a combination of measurement techniques to elucidate the current transport mechanism and the electrical manifestation of resistance drift. Our steady-state temperature-dependent measurements reveal that resistance in these devices is predominantly influenced by their electrical contacts, with conduction occurring through thermionic emission (Schottky) at the contacts. Additionally, temporal current–voltage characterization allows us to link the resistance drift to a time-dependent increase in the Schottky barrier height. These findings provide valuable insights, pinpointing the primary contributor to resistance drift in PCM devices: the Schottky barrier height for hole injection at the interface. This underscores the significance of contacts (interface) in the electrical manifestation of drift in PCM devices.

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Section: Methodsmentioning

confidence: 99%

Drift of Schottky Barrier Height in Phase Change Materials

Nir-Harwood,

Cohen,

Majumdar

et al. 2024

ACS Nano

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“…Defect engineering offers a potential method of tailoring the photochromic performance of REHO. Ion irradiation is a powerful tool for achieving controlled structural modification and is widely used for materials engineering . Energetic ions traversing a material transfer energy to its nuclear and electron systems, leading to the formation of crystal defects or their annealing, depending on which process prevails at the given irradiation conditions .…”

Section: Introductionmentioning

confidence: 99%

“…Ion irradiation is a powerful tool for achieving controlled structural modification and is widely used for materials engineering. 18 Energetic ions traversing a material transfer energy to its nuclear and electron systems, leading to the formation of crystal defects 19 or their annealing, depending on which process prevails at the given irradiation conditions. 20 For example, ion irradiation was employed for graphene nanopatterning 21 and to improve the hydrogen evolution reaction performance of MoS 2 .…”

Section: Introductionmentioning

confidence: 99%

Modification of the Photochromic Properties of Oxygen-Containing Yttrium Hydride by Irradiation with keV and MeV Ions

Moldarev,

Wolff,

Primetzhofer

2023

J. Phys. Chem. C

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“…It can be used either as treatment tool to tailor the properties of target materials or to fabricate low scale structures [20]. Phase change materials can change their properties with heavy ion-irradiation due to the enhanced electronic energy loss after interaction with the target material [21]. Various researchers have investigated the impact of ion-irradiation on the structural, optical, and electrical characteristics of chalcogenide alloys to modify these properties [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

“…Phase change materials can change their properties with heavy ion-irradiation due to the enhanced electronic energy loss after interaction with the target material [21]. Various researchers have investigated the impact of ion-irradiation on the structural, optical, and electrical characteristics of chalcogenide alloys to modify these properties [21][22][23][24]. Amorphous to crystalline phase transition and vice versa, accompanied by change in electrical and optical properties, makes chalcogenide alloys applicable for resistive switching [25], phase change random access memory [26], optical data storage [1], display devices [27], transmission windows [2,13] etc.…”

Section: Introductionmentioning

confidence: 99%

Altered the structural, morphological and optical properties of SbSe thin films through swift heavy ion irradiation

Singh

et al. 2023

Phys. Scr.

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Chalcogenide based phase change materials are gaining attention due to their ability to exhibit expeditious and reversible structural transition from amorphous to crystalline phase. This work included the effect of swift heavy silver (Ag9+) ion-irradiation (120 MeV), at various fluences (5E11, 1E12, 5E12 and 1E13 ions/cm2) on the structural, optical and morphological properties of pristine and annealed (250 ◦C) SbSe thin films. The pristine films undergo a structural transition from amorphous to crystalline upon annealing and from crystalline to amorphous upon irradiation of annealed films. Structural transition caused by annealing and ion-irradiation resulted in a drastic change in morphology and optical properties. The annealed films exhibited less transmission than the pristine and irradiated films, which increased with increase in ion-irradiation fluences because of phase transition. After irradiation, the optical band decreased for pristine thin films, because the forbidden gap defect concentration has increased, but increased after irradiating the annealed thin films that may be due to annealing out of dense localized defect states. The significant optical contrast upon phase transition in near infrared region can be utilized for different optoelectronic applications.

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Ion beam irradiation of phase change materials: A route to material properties investigation and engineering

Cited by 8 publications

References 57 publications

Drift of Schottky Barrier Height in Phase Change Materials

Drift of Schottky Barrier Height in Phase Change Materials

Modification of the Photochromic Properties of Oxygen-Containing Yttrium Hydride by Irradiation with keV and MeV Ions

Altered the structural, morphological and optical properties of SbSe thin films through swift heavy ion irradiation

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