Ion-beam-induced crystallization and amorphization of silicon

Elliman, R. G.; Williams, James S.; Brown, W. L.; Leiberich, A.; Maher, D. M.; Knoell, R. V.

doi:10.1016/s0168-583x(87)80086-1

Cited by 174 publications

(21 citation statements)

References 16 publications

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“…Thus irradiation with energetic ions induces recrystallization at temperatures as low as 200°C [44]. Interestingly, in the ioninduced recrystallization of amorphous silicon, which occurs at temperatures below 400° C. there is no evidence of twins or hexagonal phase [50].…”

Section: Hexagonal Phase In /On-implanted Siliconmentioning

confidence: 98%

“…the whole recrystallization process is termed "solid-phase epitaxial growth" (SPEG) to distinguish it from vapor-or liquid-phase epitaxial growth. The temperatures at which SPEG occurs in silicon is generally above 450° C [44]. Such temperatures can be achieved in heavy implantations since the high 7 current used for this purpose can increase the temperature of the specimen by an appreciable amount [ 43].…”

Section: Hexagonal Phase In /On-implanted Siliconmentioning

confidence: 99%

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The martensitic transformation in silicon—III. comparison with other work

Pirouz¹,

Dahmen²,

Westmacott³

et al. 1990

Acta Metallurgica et Materialia

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Section: Hexagonal Phase In /On-implanted Siliconmentioning

confidence: 98%

Section: Hexagonal Phase In /On-implanted Siliconmentioning

confidence: 99%

The martensitic transformation in silicon—III. comparison with other work

Pirouz¹,

Dahmen²,

Westmacott³

et al. 1990

Acta Metallurgica et Materialia

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“…Experiments comparing the effects of channeled and random ion beams on the SPEG rate 96 have been interpreted to imply a contribution from bulk crystal point defects. However, any potential role of bulk point defects from either phase in beam-enhanced SPEG has been limited by other similar experiments 8,97 and by the lack of an observed amorphous-layer thickness dependence to the rate during ion bombardment 8 . Our work on thermal SPEG implies that ion beam-enhanced SPEG may involve, for example, bulk point defects of any type impinging on the interface and converting to interfacial dangling bonds.…”

Section: Ion-beam Enhanced Spegmentioning

confidence: 99%

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

Lü

Nygren

Aziz

1991

Journal of Applied Physics

152

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The effects of hydrostatic pressure on the solid-phase epitaxial growth (SPEG) rate v of intrinsic Ge(100) and undoped and doped Si(100) into their respective self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically loaded fluid Ar, used as the pressure transmission medium, ensured a clean and hydrostatic environment. v was determined by in situ time-resolved visible (for Si) or infrared (for Ge) interferometry. v increased exponentially with pressure, characterized by a negative activation volume of −0.46Ω in Ge, where Ω is the atomic volume, and −0.28Ω in Si. The activation volume in Si is independent of both dopant concentration and dopant type. Structural relaxation of the amorphous phases has no significant effect on v. These and other results are inconsistent with all bulk point-defect mechanisms, but consistent with all interface point-defect mechanisms, proposed to date. A kinetic analysis of the Spaepen–Turnbull interfacial dangling bond mechanism is presented, assuming thermal generation of dangling bonds at ledges along the interface, independent migration of the dangling bonds along the ledges to reconstruct the network from the amorphous to the crystalline structure, and unimolecular annihilation kinetics at dangling bond ‘‘traps.’’ The model yields v = 2 sin(θ)vsnr exp[(ΔSf + ΔSm)/k] exp− [(ΔHf + ΔHm)/kT], where ΔSf and ΔHf are the standard entropy and enthalpy of formation of a pair of dangling bonds, ΔSm and ΔHm are the entropy and enthalpy of motion of a dangling bond at the interface, vs is the speed of sound, θ is the misorientation from {111}, and nr is the net number of hops made by a dangling bond before it is annihilated. It accounts semiquantitatively for the measured prefactor, orientation dependence, activation energy, and activation volume of v, and the pressure of a ‘‘free-energy catastrophe’’ beyond which the exponential pressure enhancement of SPEG cannot continue uninterrupted due to a vanishing barrier to dangling bond migration. The enhancement of v by doping can be accounted for by an increased number of charged dangling bonds, with no change in the number of neutrals, at the interface. Quantitative models for the doping dependence of v are critically reviewed. At low concentrations the data can be accounted for by either the fractional ionization or the generalized Fermi-level-shifting models; methods to further test these models are enumerated. Ion irradiation may affect v by altering the populatio

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“…However, IBIEC is a reversible process, where the increase in the ion flux of the irradiating beam, and /or the decrease in the target temperature can cause a planar layer-by-layer amorphization instead of an epitaxial recrystallization (Elliman et al, 1987;Linnros et al, 1986Linnros et al, , 1988. Both processes are schematically illustrated in figure 6.…”

Section: Planar Amorphizationmentioning

confidence: 99%