Ion beam analysis of ion-assisted deposited amorphous GaN

Kennedy, J.; Markwitz, A.; Lanke, U. D.; McIvor, A.; Trodahl, H. J.; Bittar, A.

doi:10.1016/s0168-583x(01)01279-4

Cited by 31 publications

(20 citation statements)

References 11 publications

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“…28 The RBS results (Table 1) show a high oxygen content in the films grown for short times (<50 min). Long-range structural properties of some of these films also have been studied by resonant Raman spectroscopy, x-ray diffraction (XRD), TEM and electron diffraction.…”

Section: Compositional and Structural Characterization Of The Iad Ganmentioning

confidence: 94%

“…26 To prepare amorphous films, the water-vapour partial pressure should be increased up to 10 5 Torr, giving films containing up to 20 at.% of oxygen for deposition times of <50 min. 28 Chemical, structural and optical properties of these films have been reported already 12 -15 and the optoelectronic properties have been correlated with their nanostructure. 16 The objective of this work is to study possible changes on the local structure around Ga atoms as the film increases in thickness.…”

Section: Introductionmentioning

confidence: 99%

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Evolution of the local structure in GaN:O thin films grown by ion‐assisted deposition with film thickness

Ariza¹,

Koo²,

Trodahl³

et al. 2005

Surface & Interface Analysis

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Optical and optoelectronic properties of gallium nitride strongly depend on the synthesis procedure, which may be related to specific structural characteristics of GaN inherent to each preparation condition. Amorphous and nanocrystalline GaN films have been prepared by ion-assisted deposition (IAD). The films prepared at 10 −5 Torr for <50 min have shown exploitable optoelectronic properties, in spite of the high concentration of oxygen of these films (up to 25 at.%). We study here the evolution of the local structure around Ga atoms as the deposition time increases. Five IAD GaN films of thickness ranging between 140 and 450 nm on silicon substrates were analysed by x-ray absorption fine structure (XAFS) at the Ga K-edge. The first and second shells of neighbouring atoms are clearly identified in the radial distribution functions at approximately 1.9 and 3.2Å, respectively. In all of the films, Ga seems to be tetrahedrally coordinated to four nitrogen atoms, some of which may be substituted by oxygen. For deposition times <50 min, analysis of both x-ray adsorption near-edge structure (XANES) and extended x-ray adsorption fine structure (EXAFS) regions indicates that the material is highly amorphous. Above this threshold, a peak corresponding to the first coordination sphere of Ga atoms becomes discernible and increases in intensity for longer deposition times, indicating that the second shell of atoms is now more ordered. The pseudo Debye-Waller factor of the Ga shell is used for monitoring the average degree of amorphization in an ∼100 nm thick top layer, which seems to be related to the film oxygen content. The XAFS results are compatible with a layered distribution of crystallinity, as has been suggested previously for these films.

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Section: Compositional and Structural Characterization Of The Iad Ganmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Evolution of the local structure in GaN:O thin films grown by ion‐assisted deposition with film thickness

Ariza¹,

Koo²,

Trodahl³

et al. 2005

Surface & Interface Analysis

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“…The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS) using RUMP analysis software in combination with nuclear reaction analysis (NRA) were employed to determine the film thickness and composition. Experimental apparatus and set up is described elsewhere [12].…”

Section: Experimental Methodsmentioning

confidence: 99%

Polycrystalline InGaN grown by MBE on fused silica glass

Kendrick

Anderson

Kinsey

et al. 2005

phys. stat. sol. (c)

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A series of polycrystalline InGaN films have been grown on fused silica glass using a plasma assisted molecular beam epitaxy (PAMBE) system. Films grown at 600 o C showed pronounced signs of indium segregation, with indium segregating to the substrate interface and film surface, to the point where an essentially In-free intermediate layer was formed. For high indium content InGaN and InN films, homogeneity was substantially improved upon reduction of the growth temperature. In these homogeneous films the PL peak position moves to lower energy with increasing In content, with a PL peak position of 0.8 eV measured for a pure InN film. For the InGaN films, the comparatively broad PL spectra could be separated into two Gaussian peaks. One peak shifted to high energy with increasing temperature, while the other exhibited a more complex behavior.

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“…In standard geometry, the sample is bombarded with high energy ions (in our case, 2.5 MeV helium) and the recoiled hydrogen atoms are detected with a surface barrier detector (SBD). 4,19 The energy of the detected particles is dependent on the energy transfer occurring during the ion-target atom collision. A thin foil is used in front of the SBD to stop the scattered primary beam from reaching the detector.…”

Section: Elastic Recoil Detection Analysismentioning

confidence: 99%

“…[1][2][3][4][5] Over the last few years, our group has been involved in several research projects related to the production and characterization of various advanced materials. We have used IBA techniques to successfully characterize many advanced material thin films prepared by different conventional techniques: synthesis of thin silicon nitride and oxide films prepared by nitridation and oxidation techniques, 6 stoichiometric and depth profile analysis of Heusler thin films prepared by pulsed laser deposition, 7 multilayered superconducting thin films of Ta x Ge 1)x alloys, 8 elemental analysis of prefired and fully reacted superconducting thin films (Y 1 B 2 C 3 O 7)x ) prepared by the inexpensive sol-gel method, 9 and helium ion implantation to create surface-near nanoporous cavity structures in titanium and titanium alloys for biomedical applications and their uptake of light elements such as oxygen.…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films

Kennedy

Markwitz

Trodahl

et al. 2007

Journal of Elec Materi

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The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA), and particle-induced x-ray emission (PIXE) have been used to quantitatively determine composition, uniformity, impurity, and elemental depth profiles of major, minor, and trace elements of group III-V nitride and zinc oxide (ZnO) thin films prepared by various growth techniques. The IBA revealed that an amorphous GaN film prepared by ion beam assisted deposition (IBAD) has large variations in film thickness and composition coupled with typically 10-20% oxygen that was found to be essential to stabilize their amorphous structure. The IBA characterization of plasma-assisted molecular beam epitaxy (PAMBE) grown GaN, InN, and InCrN films revealed composition, impurity, and uniformity information of the films. The IBA of ZnO films prepared by radio frequency (RF) sputtering showed that the Zn/O ratio often varied significantly over the film thickness. Hydrogen was found to be a major impurity in the films with around one present in the as-deposited ZnO films. It is clearly shown that the nondestructive, quantitative, and rapid IBA measurements are very useful to develop and optimize growth protocols in respect to film thickness, stoichiometry, and especially in regard to hydrogen and oxygen impurities for group III-V nitride and ZnO thin films prepared by various growth techniques.

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Ion beam analysis of ion-assisted deposited amorphous GaN

Cited by 31 publications

References 11 publications

Evolution of the local structure in GaN:O thin films grown by ion‐assisted deposition with film thickness

Evolution of the local structure in GaN:O thin films grown by ion‐assisted deposition with film thickness

Polycrystalline InGaN grown by MBE on fused silica glass

Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films

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