Ion balance detection using nano field-effect transistor with an extended gate electrode

Abstract

We developed a nano field-effect transistor (nanoFET) sensor for detecting ions in the air. Air ions can be measured using a commercial ion counter; however, it is large and expensive equipment, requires airflow to be through a cylinder type electrode or the plate electrode. NanoFET sensor is suitable for monitoring the ion generator module in home appliances like air purification. A nanoFET sensor can continuously measure the ion balance to monitor the performance of the ion generators which do static electricity elimination in electronics manufacturing lines. In this study, we developed a semiconductor sensor that can measure the ion balance in the air. The sensor is a nanoFET device with an extended gate electrode. The polarity of the ions adsorbed on the extended gate electrode is measured, and consequently, the ion imbalance is quantitatively estimated. The developed device enables reset with a switch connected to the extended gate. The sensor reads out with a current to voltage converting operational amplifier, a reset switch, and a microprocessor. We expect that the developed nanoFET sensor is practically applied to monitor the malfunction of ion generators in the air cleaner and in the static electricity elimination in electronics manufacturing lines.

Fabrication and characterization of silicon-on-insulator wafers

“…Finally, the robust structure of SOI wafers offers radiation-hardening properties, making them particularly suitable for sensitive applications where radiation tolerance is paramount. Given these advantages, SOI technology has found broad applicability [1,[4][5][6]. Their low power consumption makes them highly attractive for portable electronic devices and power-sensitive applications, while their enhanced processing speeds are used in high-performance computing and telecommunication systems.…”

Evaluation and bioparticle density correlation analysis of extended gate HEMT sensors for biological detection from microscopic view

“…Moreover, during the detection, the gate regions are rinsed into the biological solution for a long time, which will impair the performance of the HEMT chips. 9,10) In order to overcome these drawbacks, scientists have proposed the extended gate HEMT (EG-HEMT) as a substitution. [11][12][13] In EG-HEMT biosensors, the extended electrodes function as sensing areas and transfer biological signals to the gate via metal strips, preventing contact with the solution during detection.…”