Ion-assisted deposition processes: industrial network IntIon

Ehlers, Henrik; Becker, Karl-Josef; Beckmann, R.; Beermann, Nils; Brauneck, Ulf; Fuhrberg, P.; Gaebler, Dieter; Jakobs, Stefan; Kaiser, Norbert; Kennedy, Michael D.; Koenig, Friedrich; Laux, Sven; Mueller, Juergen Christian; Rau, B.; Riggers, Werner; Ristau, Detlev; Schaefer, Dieter; Stenzel, Olaf

doi:10.1117/12.514817

Cited by 16 publications

(10 citation statements)

References 7 publications

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“…Ion-assisted deposition (IAD) is widely used to improve the quality of films obtained by low-energy deposition processes such as thermal evaporation [1][2][3]. In IAD, the growing film is bombarded by the ions having energy on the order of tens and hundreds of eV.…”

Section: Introductionmentioning

confidence: 99%

Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

2022

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A systematic study of the most significant parameters of the ion-assisted deposited silicon dioxide films is carried out using the classical molecular dynamics method. The energy of the deposited silicon and oxygen atoms corresponds to the thermal evaporation of the target; the energy of the assisting oxygen ions is 100 eV. It is found that an increase in the flow of assisting ions to approximately 10% of the flow of deposited atoms leads to an increase in density and refractive index by 0.5 g/cm3 and 0.1, respectively. A further increase in the flux of assisting ions slightly affects the film density and density profile. The concentration of point defects, which affect the optical properties of the films, and stressed structural rings with two or three silicon atoms noticeably decrease with an increase in the flux of assisting ions. The film growth rate somewhat decreases with an increase in the assisting ions flux. The dependence of the surface roughness on the assisting ions flux is investigated. The anisotropy of the deposited films, due to the difference in the directions of motion of the deposited atoms and assisting ions, is estimated using the effective medium approach.

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Section: Introductionmentioning

confidence: 99%

Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

2022

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“…Great effort has been made for the evaporation process to reduce defects and improve the damage threshold [11]. Although ion assisted evaporation (IAE) has made great progress [12,13] in past decades, it was still considered an unsuitable method to deposit ultra-high reflectors due to the porous layer structure or rougher interface compared with IBS technology [14]. Commonly reported reflectivity achieved by ion assisted evaporation is below 99.9% [15,16].…”

Section: Introductionmentioning

confidence: 99%

Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source

Deng

Wang

et al. 2018

Coatings

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Ultra-high reflectors, working as a critical optical component, has been widely applied as a cavity mirror in fine optical systems such as laser gyro, F-P interferometer, etc. For decades, ion beam sputtering (IBS) technology, which can deposit ultra-low loss and dense layers, has been commonly believed to be the only and irreplaceable method to fabricate ultra-high reflectors. Thus, reports on other methods are rare and a reflectivity above 99.99% obtained by evaporation technology (including ion assisted evaporation) has not been seen yet. In the present study, an energetic radio frequency (RF) ion source was introduced during the electron beam evaporation process, which improved the layer quality dramatically. An ultra-high reflector at 1319 nm with reflectivity of 99.992% (measured by cavity-ring down method) was successfully deposited on a φ100 mm × 25 mm single crystal silicon substrate whose surface roughness was approximately 0.420 nm. The surface figure of the reflector was accurately controlled superior to 1/6λ (λ = 632.8 nm). The measured absorption was approximately 3-5 ppm and the calculated scatter based on surface roughness measurement was approximately 6.64 ppm. Total loss of the reflector was systematically discussed. This study showed that it is possible to apply electron beam evaporation in ultra-high reflector manufacture and the method is capable of depositing reflectors with an aperture larger than φ600 mm which is the maximum capacity of current IBS technology.

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“…A set of Nb 2 O 5 -SiO 2 mixture layers was deposited on fused silica (Suprasil) substrates by coevaporation in a Leybold Syrius Pro 1100 system equipped with two electron beam guns and Advanced Plasma Source [11]. This combination of materials has been used for the design [12] and deposition [13] of inhomogeneous coatings for antireflection purposes.…”

Section: Methodsmentioning

confidence: 99%

Compositional dependence of absorption coefficient and band-gap for Nb2O5–SiO2 mixture thin films

2008

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The absorption coefficient of composite films consisting of niobia (Nb 2 O 5 ) and silica (SiO 2 ) mixtures is studied for photon energies around the band gap. The films were deposited by coevaporation and their composition was varied by changing the ratio of deposition rates of the two materials. Both, as-deposited and thermally annealed films were characterized by different techniques: the absorption coefficient was determined by spectrophotometric measurements and the structural properties were investigated using infrared spectroscopy, transmission electron microscopy and X-ray diffraction. The correlation between the variations of absorption properties and film composition and structure is established. The absorption coefficients determined experimentally are compared with the results derived from effective medium theories in order to evaluate the suitability of these theories for the studied composites.

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Ion-assisted deposition processes: industrial network IntIon

Cited by 16 publications

References 7 publications

Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source

Compositional dependence of absorption coefficient and band-gap for Nb2O5–SiO2 mixture thin films

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