Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching

Coburn, J. W.; Winters, Harold F.

doi:10.1063/1.326355

Cited by 704 publications

(254 citation statements)

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“…Such synergistic interactions are also known from other systems such as silicon etching in fluorine-containing plasmas [21] or the etching of a-C:H by thermal atomic hydrogen plus noble gas ion bombardment [22,23]. Landkammer et al [24] * Corresponding author, e-mail: Christian.Hopf@ipp.mpg.de and Jacob et al [7] have investigated the erosion of a-C:H in oxygen electron-cyclotron-resonance plasmas.…”

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confidence: 99%

Chemical sputtering of carbon films by argon ions and molecular oxygen at cryogenic temperatures

Hopf

Schlüter

Jacob

2007

Applied Physics Letters

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The experiments demonstrate the existence of a synergistic interaction of molecular oxygen and energetic ions with amorphous carbon leading to enhanced erosion; although the samples, amorphous hydrogenated carbon films, are not gasified by O 2 at room temperature, additional ion bombardment at the same temperature leads to erosion rates that drastically exceed those of physical sputtering. Investigation of the temperature dependence from 400 down to 113 K shows that the erosion rate increases with decreasing temperature.

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confidence: 99%

Chemical sputtering of carbon films by argon ions and molecular oxygen at cryogenic temperatures

Hopf

Schlüter

Jacob

2007

Applied Physics Letters

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“…All sources are positioned on a linear shift such that the source-substrate distance can be varied. The gases H 2 , D 2 , SiH 4 , SiD 4 , Si 2 H 6 , and Ar can be introduced into the sources or chamber after passing a gas purifier.…”

Section: Methodsmentioning

confidence: 99%

“…The a-Si:H films have been deposited by the hot wire source from pure SiH 4 and at a substrate temperature of 250 ºC. The filament current has been set at 11 A (filament temperature is 2325±200 K), the SiH 4 flow at 3 sccm, and the pressure in the deposition chamber has been controlled at 8 mTorr.…”

Section: Depositionmentioning

confidence: 99%

“…insight into the surface reactions at the atomic scale, surface science-like studies under very well-defined and idealized conditions will be required. Such studies can for example be carried out by mimicking a-Si:H film growth using several well-defined radical beams as, e.g., done for Si plasma etching [4] and deposition of hydrogenated amorphous carbon [5]. In this paper, we present a new experimental setup for beam studies of a-Si:H film growth.…”

Section: Introductionmentioning

confidence: 99%

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New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

et al. 2004

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• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. Link to publication• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTA new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

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“…[13][14][15] A manipulator provided XYZ rotation and angle tilt ability to the sample holder. With further modification, it could provide temperature control for TPD (temperature programmed desorption) research.…”

Section: Methodsmentioning

confidence: 99%

Final Project Report for Grant DE-FG03-00ER54581 Selective Control of Chemical Reactions With Plasmas

Muscat¹

2004

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Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching

Cited by 704 publications

References 30 publications

Chemical sputtering of carbon films by argon ions and molecular oxygen at cryogenic temperatures

Chemical sputtering of carbon films by argon ions and molecular oxygen at cryogenic temperatures

New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

Final Project Report for Grant DE-FG03-00ER54581 Selective Control of Chemical Reactions With Plasmas

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