Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures

Hlatshwayo, Thulani Thokozani; Berg, N.G. van der; Msimanga, M.; Malherbe, J.B.; Kuhudzai, R.J.

doi:10.1016/j.nimb.2014.05.015

Cited by 7 publications

(9 citation statements)

References 18 publications

(18 reference statements)

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“…These results are in agreement with Scanning electron microscopy (SEM) results from our previous measurements in the same temperature range [17,20].…”

Section: Resultssupporting

confidence: 92%

“…1(d). These results are in agreement with Rutherford Backscattering Spectroscopy measurements for silver and iodine implanted samples annealed at temperatures above 1500°C [20]. Fig.…”

Section: Methodssupporting

confidence: 91%

“…The dip in the roughness curves for the silver implanted samples and the corresponding reduction in the surface area difference after annealing at 1600°C can be related to the thermal etching of SiC nano crystallites on the surface. This etching of the crystallites has been observed via SEM analysis [1,20]. The dip in both the roughness and the surface area difference for the iodine implanted sample is markedly less drastic than the dip observed for the silver implanted sample.…”

Section: Raman Intensitymentioning

confidence: 74%

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Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Kuhudzai

Malherbe

Berg

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…These results are in agreement with Scanning electron microscopy (SEM) results from our previous measurements in the same temperature range [17,20].…”

Section: Resultssupporting

confidence: 92%

“…1(d). These results are in agreement with Rutherford Backscattering Spectroscopy measurements for silver and iodine implanted samples annealed at temperatures above 1500°C [20]. Fig.…”

Section: Methodssupporting

confidence: 91%

Section: Raman Intensitymentioning

confidence: 74%

See 1 more Smart Citation

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Kuhudzai

Malherbe

Berg

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…After annealing at 1500 ºC for 30 hours, virtually all of the implanted Ag has been lost (within the detection limits of the SIMS system) through the front surface in the Ag only implanted sample. This result is consistent with our RBS results presented in reference[26]. However, when I ions are co-implanted with Ag ions and annealed again at 1500 ºC for 30 hours, SIMS Ag distribution shows that some Ag has been retained.…”

supporting

confidence: 93%

Synergistic effects of iodine and silver ions co-implanted in 6H–SiC

Kuhudzai

Malherbe

Hlatshwayo

et al. 2015

Journal of Nuclear Materials

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Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behavior has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 ºC for 30 hours in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

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“…We have concentrated on aspects such as the diffusion of several fission products implanted in SiC, carbon, and the effects of vacuum annealing on radiation damage introduced by the relatively low energy implantation ions [2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Hlatshwayo

O’Connell

Skuratov

et al. 2015

J. Phys. D: Appl. Phys.

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The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2×10 16 cm -2 and 1×10 16 cm -2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3×10 14 cm -2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV/nm and 20 keV/nm to fluences below 10 14 cm -2 . Therefore, our results suggest a fluence 2 threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation.Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation.

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Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures

Cited by 7 publications

References 18 publications

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Synergistic effects of iodine and silver ions co-implanted in 6H–SiC

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

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