(Invited) The Influence of Defects on the Electronic Properties of Hafnia

Abstract

This study reviews the modern knowledge about the electronic properties of oxygen vacancies in the hafnia. Hafnia is a key dielectric for use in the modern electronics. Oxygen vacancies in the hafnia largely determine its electronic properties. It is shown that electronic transitions to states, localized on the oxygen vacancies, determine the optical properties. The oxygen vacancies act as traps in the charge transport via hafnia films. It is demonstrated that the hafnium oxide conductivity is limited by phonon assisted tunneling between traps that are the oxygen vacancies.

Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering

“…The excitation energy is chosen to be 3.8 eV, which is less than the band-gap of HfO 2, to monitor the defect states in these films. The Bohr exciton radius for monoclinic HfO 2 NPs is estimated to be around 2.1 nm by following the procedure in [41,42]. As deposited HfO 2 NPs showed a broad emission spectrum (from 2.4 to 3.0 eV) in visible region.…”