(Invited) The Effects of Confinement and Coulomb Blockade on the Transport in Ensembles of Si Quantum Dots

Balberg, I.

doi:10.1149/05037.0087ecst

Cited by 2 publications

(16 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hence, these measurements confirmed the existence of the QC and CB effects up to the percolation threshold of clusters of touching NCs. This behavior becomes also evident from measurements near x c where a scenario that is quite similar to the one found in the STS measurements in revealing a voltage gap that may be associated with the presence of QC and CB effects [3,17]. Above x c we could easily measure the electrical conductivity and thus, the two conspicuous features that our samples provide are the strong PL (with a peak at x d ) and the rise in the electrical conductivity (in accordance with percolation theory [16]) in the high density regime.…”

Section: The Presence Of Quantum Confinement and Coulomb Blockade Phesupporting

confidence: 67%

The evolvement of the transport mechanism with the ensemble density of Si quantum dots

Balberg¹

2014

AIP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

Electrical transport mechanisms in three dimensional ensembles of silicon quantum dots Abstract. In this review I will try to suggest a comprehensive understanding of the transport mechanisms in three dimensional systems of Si quantum dots (QDs) from the single QD to the very dense ensembles. This understanding is based on our systematic microscopic and macroscopic electrical measurements as a function of the density of Si nanocrystallites. In particular, the role of quantum confinement and Coulomb blockade effects in the transport will be discussed and the concept of QDs' "touching" will be applied. This consideration will enable to reveal the presence of two transitions, a local carrier deconfinement transition and a percolation transition at which these effects are reminiscent of those found in the single QD. It is hoped that our discussion of the evolvement of the transport with the density of the QDs will provide guidance for the understanding of ensembles of semiconductor QDs in general and ensembles of Si QDs in particular.

show abstract

Section: The Presence Of Quantum Confinement and Coulomb Blockade Phesupporting

confidence: 67%

The evolvement of the transport mechanism with the ensemble density of Si quantum dots

Balberg¹

2014

AIP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

show abstract

“…In the preset work, we studied σ(t), the time response of the conductivity to external time-dependent electrical or optical excitations, both during and after these excitations. Our study involved systems for which the QC, CB, and CS effects have been well demonstrated in many works by others [ 12 , 18 , 21 ] and by us [ 9 , 16 , 22 ]. Here, however, we focus on the changes in σ(t) with the variation in the basic parameter that determines these effects, i.e., the diameter of the nanoparticles, d .…”

Section: Introductionmentioning

confidence: 89%

“…To ensure the formation of Si NCs in the films, the slide samples were annealed at 1100–1200 °C in a N 2 atmosphere for about an hour. In particular, for an annealing temperature T a ≥ 1150 °C, the Si phase of the films practically consists only of NCs [ 16 , 75 , 86 , 87 ]. This conclusion was derived from our Raman [ 10 , 16 ] and HRTEM [ 75 , 86 ] measurements.…”

Section: Methodsmentioning

confidence: 99%

“…In particular, for an annealing temperature T a ≥ 1150 °C, the Si phase of the films practically consists only of NCs [ 16 , 75 , 86 , 87 ]. This conclusion was derived from our Raman [ 10 , 16 ] and HRTEM [ 75 , 86 ] measurements. For example, as shown by our Raman spectra in Figure 1 , the crystalline Si peak (at 521 cm −1 ) “overcomes” the amorphous Si hump (around 480 cm −1 ) when T a was in the 1100–1200 °C range, thus indicating that the entire Si phase consists of NCs.…”

Section: Methodsmentioning

confidence: 99%

“…In an ensemble of nanoparticles, a charge carrier that charges a particle is essentially confined to (or trapped on) this particle, due to the Columbic energy involved in the charging of the next uncharged neighboring particles [ 15 ]. This electron localization is known as the Coulomb blockade (CB) effect [ 16 ]. Hence, the energy level structure associated with the local QC [ 3 , 9 ] and the local CB [ 17 , 18 ] determine the transport of the charge carriers throughout the macroscopic system.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Glassy-like Transients in Semiconductor Nanomaterials

Balberg

2024

Nanomaterials

Self Cite

View full text Add to dashboard Cite

Glassy behavior is manifested by three time-dependent characteristics of a dynamic physical property. Such behaviors have been found in the electrical conductivity transients of various disordered systems, but the mechanisms that yield the glassy behavior are still under intensive debate. The focus of the present work is on the effect of the quantum confinement (QC) and the Coulomb blockade (CB) effects on the experimentally observed glassy-like behavior in semiconductor nanomaterials. Correspondingly, we studied the transient electrical currents in semiconductor systems that contain CdSe or Si nanosize crystallites, as a function of that size and the ambient temperature. In particular, in contrast to the more commonly studied post-excitation behavior in electronic glassy systems, we have also examined the current transients during the excitation. This has enabled us to show that the glassy behavior is a result of the nanosize nature of the studied systems and thus to conclude that the observed characteristics are sensitive to the above effects. Following this and the temperature dependence of the transients, we derived a more detailed macroscopic and microscopic understanding of the corresponding transport mechanisms and their glassy manifestations. We concluded that the observed electrical transients must be explained not only by the commonly suggested principle of the minimization of energy upon the approach to equilibrium, as in the mechanical (say, viscose) glass, but also by the principle of minimal energy dissipation by the electrical current which determines the percolation network of the electrical conductivity. We further suggest that the deep reason for the glassy-like behavior that is observed in the electrical transients of the nanomaterials studied is the close similarity between the localization range of electrons due to the Coulomb blockade and the caging range of the uncharged atomic-size particles in the classical mechanical glass. These considerations are expected to be useful for the understanding and planning of semiconductor nanodevices such as corresponding quantum dot memories and quantum well MOSFETs.

show abstract

(Invited) The Effects of Confinement and Coulomb Blockade on the Transport in Ensembles of Si Quantum Dots

Cited by 2 publications

References 36 publications

The evolvement of the transport mechanism with the ensemble density of Si quantum dots

The evolvement of the transport mechanism with the ensemble density of Si quantum dots

Glassy-like Transients in Semiconductor Nanomaterials

Contact Info

Product

Resources

About