(Invited) The Challenges and Opportunities in Plasma Etching of Functionally Enhanced Complex Material Systems

Chen, Jack Kun-Chieh; Kim, Taeseung; Chang, Jane P.

doi:10.1149/07533.0001ecst

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…96) By tuning the oxide thickness generated by O 2 plasma exposure, the etching of metals can be controlled at an atomic level. [95][96][97][98] 2.4 Next steps in atomic layer processing Area-selective deposition is another approach garnering much attention. 49) In ALD, the precursor adsorption process depends strongly on the surface chemistry, and therefore can be limited to a part of the substrate through local modification of the surface properties.…”

Section: Atomic Layer Processing Of Multiferroic Materialsmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

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Section: Atomic Layer Processing Of Multiferroic Materialsmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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Dry etching strategy of spin-transfer-torque magnetic random access memory: A review

Islam

Cui

Miao

2020

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The spin-based memory, spin transfer torque-magnetic random access memory (STT-MRAM), has the potential to enhance the power efficiency of high density memory systems. Its desirable characteristics include nonvolatility, fast operation, and long endurance. However, dry etching of MRAM structures remains a challenge as the industry is ramping up its production. In this paper, we explore the etching strategies that have been used to etch the MRAM structures. Several etching techniques have been developed to attain optimal device performance. These are reactive ion etching, time modulated plasma etching, atomic layer etching, and ion beam etching. Sidewall profile, sidewall contamination or damage, redeposition, selectivity, and noncorrosiveness are the main factors to consider while selecting the best etching methods. This paper starts with the fundamentals of MRAM reading, writing, and storing principles and finishes with the current approaches to solve the etch challenges. For etching, the most commonly used magnetic materials such as CoFeB, CoFe, and NiFe are covered in this article.

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(Invited) The Challenges and Opportunities in Plasma Etching of Functionally Enhanced Complex Material Systems

Cited by 2 publications

References 2 publications

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Dry etching strategy of spin-transfer-torque magnetic random access memory: A review

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