Invited talk — Graphene/silicon schottky diodes for photodetection

Bartolomeo, Antonio Di; Luongo, Giuseppe; Iemmo, Laura; Giubileo, Filippo; Niu, Gang; Lupina, G.; Schroeder, Thomas

doi:10.1109/nmdc.2017.8350496

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Nowadays, due to these superior properties, there is increasing interest in using graphene to replace metal electrodes in semiconductor surfaces in Schottky diode manufacture [7][8][9][10][11]. The semiconductor Schottky junction formed using graphene is used in a variety of fields such as communications [12], photodetection [13][14][15][16][17][18], chemical and biological sensors [19]. Graphene is easy to integrate into existing semiconductor device technology, as it is compatible with thin film-forming and it is suitable to model material in graphene detection device.…”

Section: Introductionmentioning

confidence: 99%

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

2021

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In this work, the impact of gamma-ray irradiation (γ) on graphene/Al 2 O 3 /p-type Si structure has been investigated. For this, temperature-sensitive current-voltage (I-V ) analyses of the structure exposed to gamma radiation have been carried out. I-V measurements have been made between −3 V and 3 V to analyze electrical properties of the graphene/Al 2 O 3 /p-type Si before and after 60 Co γirradiation. I-V measurements of the structure have been made at the range of 300 K-405 K. Thermionic emission (TE) theory and Cheung's methods have been used to examine the electrical features of the structure. The discrimination of all experimental results has been done by using Principal Component Analysis (PCA). In PCA analysis, the first two principal components (PC1=75.6% and PC2=20.9%) accounted for 96.5% of the variance, which is a very good result.

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Section: Introductionmentioning

confidence: 99%

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

2021

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“…The use of metal layers (highly reflective) such as Au and Al in conventional systems limits the amount of light entering the semiconductor and limits its responsiveness. Therefore, Gr with high optical transmittance is the perfect material to be used as an electrode in Schottky structures [21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

Seven¹,

Orhan²,

Ocak³

2021

Phys. Scr.

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The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency.

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Invited talk — Graphene/silicon schottky diodes for photodetection

Cited by 2 publications

References 5 publications

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

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Invited talk — Graphene/silicon schottky diodes for photodetection

Cited by 2 publications

References 5 publications

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al2O3/p-type Si structure

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al2O3/p-type Si structure

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

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The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure