(Invited) Single Defect Characterization at Si/SiO ₂ Interface

Abstract

We carried out a unique and systematic characterization of single Si/SiO 2 interface traps using the charge pumping (CP) method, and observed for the first time that two energy levels participate in electron capture/emission processes in a single trap, and the maximum CP current (I CPMAX ) from a single trap is in the range of 0≤I CPMAX ≤2fq, where f is the gate pulse frequency, and q is the electron charge. Although it is widely believed that I CPMAX is given by fqN, where N is the total number of traps contributing to the CP current, we experimentally clarified that this belief is basically incorrect. Based on the systematic characterization of the single traps, we estimated the distribution of the two energy levels of the single traps for the first time. By considering the essential nature of the traps, we corrected a widely held misconception and introduced a fundamental refinement of the CP theory.