Abstract:Atomic layer deposition is used to synthesize 33 nm thick VO2 films using a vanadiumtetrachloride and H2O. The as-deposited VO2 films are amorphous and convert to the monoclinicphase after a post-deposition anneal ≥ 500 °C, 60-minute in forming gas. X-ray photoelectronspectroscopy suggests the annealed film is stoichiometrically VO2. Temperature-dependentRaman spectroscopy and ellipsometric studies reveal the semiconducting to metallic transition ofannealed and crystallized VO2 thin film. The phase transition … Show more
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