(Invited) Processing Technologies for Advanced Ge Devices

Loo, Roger; Hikavyy, Andriy; Witters, L.; Schulze, Andreas; Arimura, Hiroaki; Cott, Daire; Mitard, J.; Porret, Clément; Mertens, Hans; Ryan, Paul; Wall, J.; Matney, Kevin; Wormington, Matthew; Favia, P.; Richard, Olivier; Bender, Hugo; Horiguchi, N.; Collaert, N.; Thean, Aaron

doi:10.1149/07508.0491ecst

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…Therefore, in the presence of hydrogen passivation, Si atoms segregate at the surface [13]. Sharper (Si)Ge-to-Si transitions were indeed observed when the Si layer is grown under H-passivation conditions such as atmospheric pressure [18] and reduced pressure [19] chemical vapor deposition (CVD). Cl passivation on SiGe surface was shown to promote Si segregation [20].…”

Section: Introductionmentioning

confidence: 99%

Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques

Kohen¹,

D'Costa²,

Bhargava³

et al. 2018

Semicond. Sci. Technol.

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Future electronic (gate-all-around transistors) and photonic devices (electro-absorption modulator and laser stack) will require SiGe/Si multilayer stacks with abrupt interfaces. Chemical vapor deposition (CVD) is a proven method to epitaxially grow such multilayer structures. However, the abruptness of the compositional change is limited by Ge segregation occurring during Si layer growth on a (Si)Ge surface. Here, we study the compositional abruptness at the interface between Si 0.70 Ge 0.30 and Si layers epitaxially grown in a CVD reactor. The ultra-thin interface layer between SiGe and Si is characterized by transmission electron microscopy, secondary ion mass spectrometry and spectroscopic ellipsometry (SE). Our results show that a Si layer grown using a chlorinated chemistry produces the most abrupt interface. For Si deposition processes with non-chlorinated chemistry, lower growth temperature and a higher order hydride precursor result in a reduced transition thickness. Furthermore, we show that the interface thickness measured by the different metrology techniques are in good agreement, suggesting that SE can be used to evaluate the ultra-thin interface at the Si 0.70 Ge 0.30 -to-Si interface, resulting in considerably shorter development time in a production environment.

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Section: Introductionmentioning

confidence: 99%

Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques

Kohen¹,

D'Costa²,

Bhargava³

et al. 2018

Semicond. Sci. Technol.

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“…The reported methodology is intended to be a general approach for investigating faceted growth under far-from-equilibrium conditions.In the last decades, materials research in different fields, such as microelectronics and photonics, has heavily focused on miniaturization. In more recent years, both the scientific and industrial interest has progressively included in mainstream materials research the development of three-dimensional (3D) heterostructures allowing for functionalization, diversification and optimization rather than the reduction of scale [1][2][3][4][5][6][7][8][9][10][11] . Patterning emerged as a powerful and straightforward technique to control the position of the 3D structures.…”

mentioning

confidence: 99%

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments

Albani

Bergamaschini

Barzaghi

et al. 2021

Sci Rep

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The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum computing to single photon avalanche detectors. In most cases, such structures are achievable only under far-from-equilibrium growth conditions. Controlling the shape and morphology of the growing structures, to meet the strict requirements for an application, is far more complex than in close-to-equilibrium cases. The development of predictive simulation tools can be essential to guide the experiments. A versatile phase-field model for kinetic crystal growth is presented and applied to the prototypical case of Ge/Si vertical microcrystals grown on deeply patterned Si substrates. These structures, under development for innovative optoelectronic applications, are characterized by a complex three-dimensional set of facets essentially driven by facet competition. First, the parameters describing the kinetics on the surface of Si and Ge are fitted on a small set of experimental results. To this goal, Si vertical microcrystals have been grown, while for Ge the fitting parameters have been obtained from data from the literature. Once calibrated, the predictive capabilities of the model are demonstrated and exploited for investigating new pattern geometries and crystal morphologies, offering a guideline for the design of new 3D heterostructures. The reported methodology is intended to be a general approach for investigating faceted growth under far-from-equilibrium conditions.

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“…3 Nonplanar, three-dimensional (3D) heterostructures such as FinFETs 4 or gate-all-around, vertical transistors 5 emerged as promising structures to maintain scaling and meet performance requirements. 3,6,7 They also allow for exploiting peculiar features that are absent in bulk-like systems such as, e.g., high surface/volume ratios, micro-and nano-strains, and composition fluctuations. Moreover, similar nanostructures such as nanowires have been proposed in a wealth of applications in the field of nanophotonics.…”

mentioning

confidence: 99%

Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability

Salvalaglio

Zaumseil

Yamamoto

et al. 2018

Applied Physics Letters

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We present the morphological evolution obtained during the annealing of Ge strips grown on Si ridges as a prototypical process for 3D device architectures and nanophotonic applications. In particular, the morphological transition occurring from Ge/Si nanostrips to nanoislands is illustrated. The combined effect of performing annealing at different temperatures and varying the lateral size of the Si ridge underlying the Ge strips is addressed by means of a synergistic experimental and theoretical analysis. Indeed, three-dimensional phase-field simulations of surface diffusion, including the contributions of both surface and elastic energy, are exploited to understand the outcomes of annealing experiments. The breakup of Ge/Si strips, due to the activation of surface diffusion at high temperature, is found to be mainly driven by surface-energy reduction, thus pointing to a Rayleigh-like instability. The residual strain is found to play a minor role, only inducing local effects at the borders of the islands and an enhancement of the instability.

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(Invited) Processing Technologies for Advanced Ge Devices

Cited by 4 publications

References 21 publications

Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques

Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments

Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability

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