(Invited) Polycrystalline Silicon Thin Film Transistors

Abstract

Technologies of polycrystalline silicon thin film transistors (polySi TFTs) are reviewed. Many important technologies have been developed in recent twenty years for establishing low processing temperature fabrication of poly-Si TFTs in order to use glass or plastic substrates. There have been rapid thermal annealing methods for formation of poly-Si films, defect passivation of polySi grain boundaries, and SiO 2 formation. Structural and electrical properties of poly-Si films are also discussed. Characterization and evaluation methods are also reviewed. They are important for developing poly-Si TFTs processing. We discuss capability of TFT performance and possibility of application to electronic devices in future.