(Invited) Plasma Activation as a Pretreatment Tool for Low-Temperature Direct Wafer Bonding in Microsystems Technology

Eichler, Marko; Hennecke, Philipp; Nagel, Krees; Gabriel, Manal M.; Klages, Claus‐Peter

doi:10.1149/05007.0265ecst

Cited by 6 publications

(6 citation statements)

References 8 publications

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“…On the upside DBD are capable of creating localized micro plasma environments as the mean free path length is only about 100nm at 1 bar. The first application using DBD in a wafer bond process was the surface preparation for low temperature Silicon-Silicon fusion bond processes (15)(16). An option for the current generation of Suss mask or bond aligners called SELECT adds to the tool the possibility to generate a structured DBD (17)(18).…”

Section: Dielectric Barrier Discharge -Atmospheric Pressure Plasmamentioning

confidence: 99%

Surface Preparation and Eutectic Wafer Bonding

Heller

Zoberbier²,

Fujita³

et al. 2016

ECS Trans.

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Bond surface preparation is an integral part of all eutectic wafer bond processes currently used in high volume production. It is not unusual to have a requirement conflict between the bond surfaces and the device itself, especially in case of MEMS inertial sensors. A typical example of the issue at hand is the need of an anti-stiction coating material for the device and the interference of the material with the eutectic bond process. This paper reports on the novel usage of localized plasma in conjunction with an improved permanent wafer bonder to reconcile the conflicting needs in case of eutectic Aluminum-Germanium wafer bonding.

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Section: Dielectric Barrier Discharge -Atmospheric Pressure Plasmamentioning

confidence: 99%

Surface Preparation and Eutectic Wafer Bonding

Heller

Zoberbier²,

Fujita³

et al. 2016

ECS Trans.

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“…Modification of surrounding surfaces of polymer dielectrics by a µDBD as indicated in case 1 is of interest for the control of wettability of channels and other cavities in microfluidic devices and, as shown earlier already, it can be applied homogeneously to modify long channels evenly or, if necessary, it can also be limited to short segments in longer channel 3, 4. As reported in another contribution to this special issue, it is also possible to modify, close to a branching point in a T‐ or Y‐shaped channel branching, only one side of the main channel or to modify two opposing walls of it differently within one step, if the finite diffusive mixing length of the process gas components is suitably utilized 5. Internal coating or modification of microfluidic devices will, however, not be treated further in this article.…”

Section: Introductionmentioning

confidence: 99%

Plasma Printing and Related Techniques – Patterning of Surfaces Using Microplasmas at Atmospheric Pressure

Thomas

Borris

Dohse

et al. 2012

Plasma Processes & Polymers

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The interest in applications of atmospheric‐pressure plasmas to solve surface‐technological tasks was originally motivated primarily by the expectation that major cost savings could be achieved if plasma‐based processes, conventionally run below 1 mbar, could now be performed at ambient pressure. However, it was soon recognized that, working at 1 bar, also completely new techniques are made feasible by the utilization of microdischarges, thanks to strongly reduced mean free paths of plasma constituents. The present contribution gives an overview of a number of possibilities, studied in the recent years, to apply atmospheric‐pressure microplasmas for the patterned coating or surface modification of two‐ and three‐dimensional substrates.

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“…Much progress in terms of plasma type, plasma treatment parameters and annealing conditions have been studied. Nitrogen (N 2 ), oxygen (O 2 ) and argon (Ar) are the most commonly used activated gases [19]. A mixed gas of O 2 /CF 4 also has been proposed to enhance bonding strength and restrain the formation of interfacial voids [20,21].…”

Section: Introductionmentioning

confidence: 99%

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

Cui

et al. 2021

Processes

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Wafer direct bonding is an attractive approach to manufacture future micro-electro-mechanical system (MEMS) and microelectronic and optoelectronic devices. In this paper, a combined hydrophilic activated Si/Si wafer direct bonding process based on wet chemical activation and O2 plasma activation is explored. Additionally, the effect on bonding interface characteristics is comprehensively investigated. The mechanism is proposed to better understand the nature of hydrophilic bonding. The water molecule management is controlled by O2 plasma activation process. According to the contact angle measurement and FTIR spectrum analysis, it can be concluded that water molecules play an important role in the type and density of chemical bonds at the bonding interface, which influence both bonding strength and voids’ characteristics. When annealed at 350 °C, a high bonding strength of more than 18.58 MPa is obtained by tensile pulling test. Cross sectional SEM and TEM images show a defect-free and tightly bonded interface with an amorphous SiOx layer of 3.58 nm. This amorphous SiOx layer will induce an additional energy state, resulting in a lager resistance. These results can facilitate a better understanding of low-temperature hydrophilicity wafer direct bonding and provide possible guidance for achieving good performance of homogenous and heterogenous wafer direct bonding.

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(Invited) Plasma Activation as a Pretreatment Tool for Low-Temperature Direct Wafer Bonding in Microsystems Technology

Cited by 6 publications

References 8 publications

Surface Preparation and Eutectic Wafer Bonding

Surface Preparation and Eutectic Wafer Bonding

Plasma Printing and Related Techniques – Patterning of Surfaces Using Microplasmas at Atmospheric Pressure

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

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