Abstract:The nitride High Electron Mobility (HEMTs) have a great potential for high power and RF applications because of a high breakdown field, a very large density of the polarization induced two-dimensional electrons, high electron velocities and mobilities, excellent thermal properties, chemical inertness, and radiation hardness. GaN power transistors grown on silicon substrates are already being commercialized. However, the full potential of the nitride based HEMTs is still to be achieved and will require improvem… Show more
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