(Invited) Physical Understanding of HfZrO2/Si FeFET Memory and Its AI Applications
Shinichi Takagi,
Kasidit Toprasertpong,
Zuocheng Cai
et al.
Abstract:Si-friendly HfO2-based FeFETs have been well recognized as a technology booster for future integrated memory applications, which are expected to enhance the energy efficiency of AI computation. In this paper, we present our recent studies on the understanding of the coupling between polarization, inversion-layer charges, and carrier traps in HfZrO2 (HZO)/Si FeFET memory. Discrimination of polarization, inversion carriers, and trapped carriers is realized by combining P-V, quasi-split C-V, and Hall measurements… Show more
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