Invited paper. Avalanche diode oscillators. I. Basic concepts

Culshaw, Brian; Giblin, R.A.

doi:10.1080/00207217408900569

Cited by 22 publications

(3 citation statements)

References 20 publications

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“…Acharyya et al International Journal of Electronics 1451 over avalanche generation when the frequency increases above 260 GHz. This frequency corresponds to the background doping level of nearly 5.0 × 10 23 m −3 which is in close agreement with the reported results (Culshaw & Giblin, 1974;Haddad, Greiling, & Schroeder, 1970;Sze, 1981). At first at lower frequencies, the avalanche generation rate predominates over tunnelling generation rate.…”

supporting

confidence: 92%

Effects of tunnelling current on millimetre-wave IMPATT devices

Acharyya

Mukherjee

Banerjee

2014

International Journal of Electronics

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In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed tunnelling and avalanche transit time mode is studied by taking into account the parasitic series resistance of the device. The results show that the parasitic resistance of mm-wave IMPATTs increases and consequently the power delivered by the device decreases due to the consequence of band-to-band tunnelling. The critical background doping concentration and operating frequency are found to be 5.0 × 10 23 m −3 and 260 GHz, respectively, above which the influence of tunnelling on the RF performance of the device becomes predominant.

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confidence: 92%

Effects of tunnelling current on millimetre-wave IMPATT devices

Acharyya

Mukherjee

Banerjee

2014

International Journal of Electronics

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“…The phase delay between the rf voltage and current is due to the time for the generation and transit of charge packets, so negative resistance will be generated in the device, and then the dc power will be converted into rf output power. The visible increase of charge packet concentration and folding in the drift region, as shown in Figure 8, is attributed to the negative differential mobility (NDM) effect of GaN materials [25,32], which helps to significantly improve the rf performance of IMPATT devices. Therefore, combining with Figure 3b, it can be clearly seen that the avalanche enhancement phenomenon increases the injected charge packet concentration, which is one of the mechanisms for improving the performance of SiC/GaN IMPATT.…”

Section: Large-signal Simulation Results and Discussionmentioning

confidence: 99%

Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode

Dai

Dang

et al. 2021

Electronics

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This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n structure to replace the GaN homogenous p-n junction to manufacture an impact-ionization-avalanche-transit-time (IMPATT) diode, and the performance of this 6H-SiC/GaN heterojunction single-drift-region (SDR) IMPATT diode is simulated at frequencies above 100 GHz. The performance parameters of the studied device were simulated and compared with the conventional GaN p-n IMPATT diode. The results show that the p-SiC/n-GaN IMPATT performance is significantly improved, and this is reflected in the enhanced characteristics in terms of operating frequency, rf power, and dc-rf conversion efficiency by the two mechanisms. One such characteristic that the new structure has an excessive avalanche injection of electrons in the p-type SiC region owing to the ionization characteristics of the SiC material, while another is a lower electric field distribution in the drift region, which can induce a higher electron velocity and larger current in the structure. The work provides a reference to obtain a deeper understanding of the mechanism and design of IMPATT devices based on wide-bandgap semiconductor materials.

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“…The DIMPATT diode geometrical and technological structure and its DC and RF bias conditions determine a frequency band inside which the device presents a dynamic negative conductance and consequently is expected to amplify or oscillate [24]. Figure 3 shows the frequency evolution of the DIMPATT diode input/output RF power gain for three DC current density values, obtained from single tone simulations.…”

Section: Amplificationmentioning

confidence: 98%

2D time-domain electromagnetic macroscopic numerical modelling on parallel computer: application to the mm-wave silicon DIMPATT diode

Moussati

Dalle

2008

J Comput Electron

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A new time-domain two-dimensional (2D) electromagnetic (EM) physical modelling of non-linear distributed semiconductor devices has been developed. It is based on a numerical procedure which solves in a self consistent manner both Maxwell's equations and a macroscopic transport model based on the drift-diffusion approximation. The software can be run on a parallel computer. It is based on finite-difference time-domain (FDTD) explicit schemes associated to the domain decomposition method. The millimetre-wave travelling-wave IMPATT diode or Distributed IMPact ionisation and Avalanche and Transit Time (DIMPATT) diode is the non linear test structure chosen to validate the model. RF simulations under amplification and CW oscillation operating modes have been performed. The results presented in this paper consist on the one hand of results that can be qualitatively compared to previously published theoretical works and on the other hand of features especially pointed out thanks to the new electromagnetic physical model capabilities.

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Invited paper. Avalanche diode oscillators. I. Basic concepts

Cited by 22 publications

References 20 publications

Effects of tunnelling current on millimetre-wave IMPATT devices

Effects of tunnelling current on millimetre-wave IMPATT devices

Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode

2D time-domain electromagnetic macroscopic numerical modelling on parallel computer: application to the mm-wave silicon DIMPATT diode

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