Abstract:We investigate Vfb behavior of (TaC)1-xAlx gated HfO2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700 °C, while the negative Vfb shift occurs at below 600 °C. At below 600 °C, the effective work function (φm,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φm,eff change induced by Al diffusion from gate electrode at 700 an… Show more
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