(Invited) High-K Dielectrics / High-Mobility Channel MOSFETs

Abstract

We have systematically investigated the effect of process annealing sequence, channel thickness/doping concentration and high-k gate stacks on device performance of surface channel InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, high performance InGaAs MOSFETs and tunneling field-effect-transistors (TFETs) with optimized device structure and process are presented.