(Invited) Fabrication and Device Performance of 2.7 Kv/2.5A NiO/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Power Rectifiers

Xia, Xinyi; Li, Jian-Sian; Chiang, Chao-Ching; Ren, F.; Pearton, S. J.

doi:10.1149/11102.0103ecst

Cited by 2 publications

(1 citation statement)

References 32 publications

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“…When hetero-epitaxy is conducted, lattice mismatch can lead to a non-ideal interface, resulting in the presence of interface traps or dislocations. Under high electric field conditions, interface traps may undermine carrier mobility [49,50]. Furthermore, dislocations introduce structural distortions, leading to localized strain and an electric field peak, thereby affecting the device's performance and reliability.…”

Section: Epitaxy Thickness and Dopingmentioning

confidence: 99%

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

et al. 2023

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Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices. However, its low thermal conductivity is reckoned to be a severe issue in the thermal management of high-power devices. The epitaxial integration of gallium oxide thin films on silicon carbide (SiC) substrates is a possible solution for tackling the cooling problems, yet premature breakdown at the Ga2O3/SiC interface would be introduced due to the relatively low breakdown strength of SiC (3.2 MV/cm). In this paper, the on-state properties as well as the breakdown characteristics of the Ga2O3-on-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated by using the technology computer-aided design (TCAD) approach. Compared with the full-Ga2O3 MOSFET, the lattice temperature of the Ga2O3-on-SiC MOSFET was decreased by nearly 100 °C thanks to the high thermal conductivity of SiC. However, a breakdown voltage degradation of >40% was found in an unoptimized Ga2O3-on-SiC MOSFET. Furthermore, by optimizing the device structure, the breakdown voltage degradation of the Ga2O3-on-SiC MOSFET is significantly relieved. As a result, this work demonstrates the existence of premature breakdown in the Ga2O3-on-SiC MOSFET and provides feasible approaches to further enhance the performance of hetero-integrated Ga2O3 power devices.

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Section: Epitaxy Thickness and Dopingmentioning

confidence: 99%

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

et al. 2023

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Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Chiang

Xia

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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The effect of doping in the drift layer and the thickness and extent of extension beyond the cathode contact of a NiO bilayer in vertical NiO/β-Ga2O3 rectifiers is reported. Decreasing the drift layer doping from 8 × 1015 to 6.7 × 1015 cm−3 produced an increase in reverse breakdown voltage (VB) from 7.7 to 8.9 kV, the highest reported to date for small diameter devices (100 μm). Increasing the bottom NiO layer from 10 to 20 nm did not affect the forward current–voltage characteristics but did reduce reverse leakage current for wider guard rings and reduced the reverse recovery switching time. The NiO extension beyond the cathode metal to form guard rings had only a slight effect (∼5%) in reverse breakdown voltage. The use of NiO to form a pn heterojunction made a huge improvement in VB compared to conventional Schottky rectifiers, where the breakdown voltage was ∼1 kV. The on-state resistance (RON) was increased from 7.1 m Ω cm2 in Schottky rectifiers fabricated on the same wafer to 7.9 m Ω cm2 in heterojunctions. The maximum power figure of merit (VB)2/RON was 10.2 GW cm−2 for the 100 μm NiO/Ga2O3 devices. We also fabricated large area (1 mm2) devices on the same wafer, achieving VB of 4 kV and 4.1 A forward current. The figure-of-merit was 9 GW cm−2 for these devices. These parameters are the highest reported for large area Ga2O3 rectifiers. Both the small area and large area devices have performance exceeding the unipolar power device performance of both SiC and GaN.

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(Invited) Fabrication and Device Performance of 2.7 Kv/2.5A NiO/Ga₂O₃ Heterojunction Power Rectifiers

Cited by 2 publications

References 32 publications

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

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(Invited) Fabrication and Device Performance of 2.7 Kv/2.5A NiO/Ga2O3 Heterojunction Power Rectifiers

Cited by 2 publications

References 32 publications

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

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(Invited) Fabrication and Device Performance of 2.7 Kv/2.5A NiO/Ga₂O₃ Heterojunction Power Rectifiers