Abstract:In this paper, we report on the enhanced light extraction efficiency (LEE) of AlInN nanowire ultraviolet light-emitting diodes (LEDs) at an emission wavelength of 283 nm using the surface passivation approach and hexagonal photonic crystal structures. Several dielectric materials including SiO2, Si3N4, HfO2, AlN, and BN, have been investigated as the surface passivation layer for the AlInN nanowire LEDs. The LEDs using these dielectric materials show significantly improved LEE compared to that of the unpassiva… Show more
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