(Invited) DLTS Studies of Defects in n-GaN

Tokuda, Yutaka

doi:10.1149/07504.0039ecst

Cited by 46 publications

(54 citation statements)

References 27 publications

(58 reference statements)

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“…Tokuda used DLTS to investigate how the V-III ratio affects E3 defect formation in Si-doped MOCVD-grown n-GaN layers. [23] A larger V-III ratio induces a smaller C concentration and greater E3 density, which is the same trend that appears in the current results. Hacke and Hasse explained this dependence on the V-III ratio by invoking the N Ga model.…”

Section: Resultssupporting

confidence: 88%

“…Based on theoretical calculations, Hacke and Hasse proposed that E3 traps originate from antisite N defects ( N Ga ). Tokuda used DLTS to investigate how the V–III ratio affects E3 defect formation in Si‐doped MOCVD‐grown n‐GaN layers . A larger V–III ratio induces a smaller C concentration and greater E3 density, which is the same trend that appears in the current results.…”

Section: Resultssupporting

confidence: 74%

“…In all of the spectra, a large dominant peak appears at approximately 270 K. For both samples, the peak height depends on the off‐angle. Deep‐level defects in n‐GaN crystals have been intensively studied by DLTS measurements and have been identified as E1 ( E C − 0.24–0.26 eV), E2 ( E C − 0.40 eV), and E3 ( E C − 0.57–0.61 eV) in this temperature range . The E2 defect is typically not detected in GaN epitaxial layers grown on GaN substrates.…”

Section: Resultsmentioning

confidence: 99%

“…Deep-level defects in n-GaN crystals have been intensively studied by DLTS measurements and have been identified as E1 (E C À 0.24-0.26 eV), E2 (E C À 0.40 eV), and E3 (E C À 0.57-0.61 eV) in this temperature range. [22][23][24][25] The E2 defect is typically not detected in GaN epitaxial layers grown on GaN substrates. In a previous work, we reported DLTS results for Ni Schottky contacts formed on a GaN-on-GaN wafer structure with various epitaxial growth conditions.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Shiojima

Horikiri

Yoshida

et al. 2019

Physica Status Solidi (b)

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The effect of the surface off‐angle toward either the a‐ or m‐axis on the defect formation is characterized using deep‐level transient spectroscopy (DLTS) in conjunction with the carrier concentration for Ni Schottky contacts formed on n‐GaN drift layers. In both noncontact and conventional capacitance–voltage results, off‐angle dependence on carrier concentration is observed. For all samples, a large dominant peak appears at approximately 270 K in the DLTS spectra and is attributed to E3 (EC − 0.57–0.61 eV) defects. Carbon atoms can act as carrier compensators and form E3 defects. These results can be interpreted based on how C incorporation during crystal growth depends on the off‐angle.

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Section: Resultssupporting

confidence: 88%

Section: Resultssupporting

confidence: 74%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Shiojima

Horikiri

Yoshida

et al. 2019

Physica Status Solidi (b)

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“…We note here that the DLTS/DLOS results on these samples reveal comparable low trap concentrations with state‐of‐the‐art GaN MOCVD reports for high power vertical device applications. [ 36,46,52–55 ]…”

Section: Resultsmentioning

confidence: 99%

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Zhang

Chen

et al. 2021

Physica Status Solidi (a)

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The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high‐power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h−1 is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH4 flow, an electron concentration as low as 4 × 1015 cm−3 in n−‐GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h−1. Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 × 1016 cm−3. GaN growth on Mn‐doped semi‐insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm2 V−1 s−1 as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.

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Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

Markevich

Halsall

Sun

et al. 2022

Physica Status Solidi (b)

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Results of a deep‐level transient spectroscopy (DLTS) study of trapping states in Ni/Au Schottky diodes made on Si‐doped GaN layers grown by metal–organic vapor‐phase epitaxy (MOVPE) on highly conductive n‐type Ammono‐GaN substrates are reported. In all as‐grown samples, the DLTS signals due to traps with the activation energies for electron emission (Eem) of about 0.26 and 0.60 eV (referred to as E1 and E3 traps, respectively) have been detected. It is found that the electric field (E) significantly enhances the electron emission rate (eem) for the E1 trap, while for the E3 trap the eem(E) dependence is not very strong. The eem(E) dependence for the E1 trap is found to be characteristic of attractive traps with spherically symmetric square well potential with a radius of about 2.9 ± 0.25 nm. The eem(E) dependence for the E3 trap is accounted for by a phonon‐assisted tunneling mechanism. The zero‐E Eem values for both traps are determined. Correlations between the concentrations of the E1 and E3 traps and concentrations of impurities (H, C, Si, O, Mg, and Fe) determined by secondary ion mass spectrometry in the samples are investigated. Charge states and origins of the E1 and E3 traps are discussed.

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(Invited) DLTS Studies of Defects in n-GaN

Cited by 46 publications

References 27 publications

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

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