(Invited) Crystal Defects in Wide Bandgap Semiconductors

Abstract

The state-of-the-art power switching devices made from SiC and GaN semiconductors contain a high density of crystal defects. Most of these defects are present in starting wafers and some are generated during device processing. There is little conclusive evidence so far on the exact role that the crystal defects paly on device performance, manufacturing yield, and more importantly, long-term field-reliability especially when devices are operating under extreme stressful environments. This paper provides a review of the current state-of-the-art of SiC and GaN power semiconductor material technology, and the potential impact crystal defects may have on high-density power switching electronics. A review of silicon technology development and manufacturing evolution is made to draw a parallel between silicon and wide bandgap (WBG) semiconductor power electronics.

Research on the Key Problems in the Industrialization of SiC Substrate Materials

“…It not only realizes the technology of virtual SiC crystal growth, but also reduces the number of trial and error experiments. [8]. In addition, the reduction of SiC crystal defects is very important for improving SiC crystal yield and reducing its cost.…”

“…Micropipe and dislocation are the main defects of SiC substrates. The micropipe density is one of the most important performance indicators for SiC substrates[8]. In addition, the reduction of SiC crystal defects is very important for improving SiC crystal yield and reducing its cost.…”

Ultra Large Scale Manufacturing Challenges of Silicon Carbide and Gallium Nitride Based Power Devices and Systems

“…Power electronics manufacturing companies are still pushing to extract the best from Si based power MOSFET and IGBT (4). In recent years, significant progress has been made in reducing the defect densities of bulk SiC and GaN wafers (5). However, as stated earlier WBG based power systems are commercially available only for some niche applications.…”