(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga₂O₃Must Master to Compete with SiC and GaN HPE Devices

Abstract

Power diodes and transistors fabricated from the ultra-wide bandgap (UWBG) semiconductors, AlGaN, Ga 2 O 3 , and diamond are compared with those fabricated from GaN and SiC using currently available values. Parameters used in the operation of the devices are discussed, methods for improving them are described, and the ability to, and importance of, improving them are assessed. Equations for the resistance of different elements of the device are also provided so one can assess their importance and make meaningful comparisons between the different types of transistors.