2007
DOI: 10.1063/1.2738946
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Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy

Abstract: Analysis of the Raman Stokes peak position and its shift has been frequently used to estimate either temperature or stress in microelectronics and microelectromechanical system devices. However, if both fields are evolving simultaneously, the Stokes shift represents a convolution of these effects, making it difficult to measure either quantity accurately. By using the relative independence of the Stokes linewidth to applied stress, it is possible to deconvolve the signal into an estimation of both temperature … Show more

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Cited by 147 publications
(116 citation statements)
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“…29 This linear behavior of Raman peak frequencies with temperature is seen in many materials within a certain temperature range. 22,23,29 In Table 1 (Table 1 and Supporting Information) and found no significant difference in the first-order temperature coefficients for either mode. The small difference between χ T coefficients for the E 2g 1 mode in suspended versus sapphire-supported likely results from varied in-plane strain applied by the substrate since E 2g 1 mode is prone to strain in MoS 2 while A 1g is not.…”
Section: Resultsmentioning
confidence: 90%
“…29 This linear behavior of Raman peak frequencies with temperature is seen in many materials within a certain temperature range. 22,23,29 In Table 1 (Table 1 and Supporting Information) and found no significant difference in the first-order temperature coefficients for either mode. The small difference between χ T coefficients for the E 2g 1 mode in suspended versus sapphire-supported likely results from varied in-plane strain applied by the substrate since E 2g 1 mode is prone to strain in MoS 2 while A 1g is not.…”
Section: Resultsmentioning
confidence: 90%
“…These are scanning thermal microscopes (SThM) [5], dispersed or scanned individual nanoprobes [3,6], direct methods like micro-Raman spectroscopy [7] or near-field optical temperature measurements [8]. SThMs have temperature sensitive elements at a scanning tip (e.g.…”
mentioning
confidence: 99%
“…Assuming that these uncertainties are uncorrelated yields an uncertainty for the peakwidth-based temperature measurement of ±8.79 K. This total uncertainty is slightly lower than previously reported by Beechem et al (2007), namely ~9 K rather than ~11 K, because of the increased number of acquisitions used and the increased signal level used.…”
Section: Experimentally Measured Temperature Profilesmentioning
confidence: 78%
“…Both metrics are practical for temperature mapping of MEMS. However, while peak width is sensitive only to surface temperature, peak position is sensitive to both stress and temperature (Kearney et al, 2006;Beechem et al, 2007).…”
Section: Experimentally Measured Temperature Profilesmentioning
confidence: 99%