2009
DOI: 10.1088/0022-3727/42/10/105410
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Investigations on the structural, optical and electronic properties of Nd doped ZnO thin films

Abstract: We report the synthesis and characterization of Nd doped ZnO thin films grown on Si (1 0 0) substrates by the spray pyrolysis method. The surface morphology of these thin films was investigated by scanning electron microscopy and shows the presence of randomly distributed structures of nanorods. Grazing angle x-ray diffraction studies confirm that the doped Nd ions occupied Zn sites and these samples exhibited a wurtzite hexagonal-like crystal structure similar to that of the parent compound, ZnO. The micro-p… Show more

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Cited by 69 publications
(48 citation statements)
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“…In the same way the full width at half maximum (FWHM) of (0 0 2) rocking curves are significantly larger than the ones measured on undoped films, Nd can be incorporated by substitution of Zn or in an interstitial position in the wurtzite ZnO lattice. Results from the NEXAFS study show strong evidence for hybridization of Nd ions with O in the ZnO lattice [15]. This study also indicates that trivalent Nd ions occupy divalent Zn sites.…”
Section: Resultsmentioning
confidence: 53%
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“…In the same way the full width at half maximum (FWHM) of (0 0 2) rocking curves are significantly larger than the ones measured on undoped films, Nd can be incorporated by substitution of Zn or in an interstitial position in the wurtzite ZnO lattice. Results from the NEXAFS study show strong evidence for hybridization of Nd ions with O in the ZnO lattice [15]. This study also indicates that trivalent Nd ions occupy divalent Zn sites.…”
Section: Resultsmentioning
confidence: 53%
“…The direct excitation of Nd 3+ ions in the ZnO matrix was possible, and an intense signal was also observed when the ZnO host was excited by UV light. This demonstrates the existence of a transfer mechanism between the ZnO host and Nd 3+ ions [15,19], i.e. Nd-doped ZnO films could act as an efficient downshifter in PV devices [19].…”
Section: Introductionmentioning
confidence: 85%
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