Investigations on the Si/SiO2 interface defects of silicon nanowires

Cui, Licong; Xia, Weiwei; Wang, F.; Yang, L.J.; Hu, Yongjie

doi:10.1016/j.physb.2012.10.002

Cited by 5 publications

(3 citation statements)

References 20 publications

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“…Ti metal was also introduced to HF/ H 2 O 2 aqueous etchant to etch Ag-loaded Si (n-type, 100) [ 105 ], resulting in a lower etching rate by increasing Ti concentration. This decrease was attributed to the lowering of H 2 O 2 concentration because TiF 6 2− produced by the reaction of Ti and HF can complex with H 2 O 2 to form anions of [TiF 6 (H 2 O 2 )] 2− .…”

Section: Silver Salt and Single Step Macementioning

confidence: 99%

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

2021

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Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.

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Section: Silver Salt and Single Step Macementioning

confidence: 99%

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

2021

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“…21 Moreover, research on SiO x -Si interface is always a classical topic from both technological and scientic aspects. [24][25][26][27] Oxidation of Si to form Si-SiO x (usually SiO 2 ) interface occurs easily on the surface of Si NWs either during synthesis or exposure to air. As an excellent insulator, the SiO 2 layer passivates the surface of Si, not only by creating a brilliant barrier against a variety of harsh environments (i.e., impurity diffusion), but also by affecting the physicochemical properties of Si NWs.…”

Section: Introductionmentioning

confidence: 99%

Tuning the fluorescence intensity and stability of porous silicon nanowires via mild thermal oxidation

Gan

et al. 2017

RSC Adv.

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“…Nano-structure design can not only minimize the volume expansion, but shorten lithium ion transmission path length. In fact, there have been some designed nanostructure silicon materials including nanorods, nanowires, hollow nanospheres [10][11][12] , which increase the cycle performance of silicon anodes. However, these structures require the introduction of chemical vapor deposition (CVD) or template technique, all of which are expensive and difficult to limit their scale required.…”

Section: Introductionmentioning

confidence: 99%