Investigations on the Passivation Mechanism of AlN:H and AlN:H-SiN:H Stacks

POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties

“…The film composition as a function of depth of as-deposited and annealed PO x /Al 2 O 3 samples was analyzed using Time-of-Flight Secondary-Ion Mass Spectroscopy (ToF-SIMS). These measurements were performed by Eurofins Materials Science Netherlands BV with 36,37 Ga 2 O 3 , 38,39 AlN, 40 ZrO 2 , 41 and HfO 2. 42−45 The data are divided into materials with negative (left) and positive (right) fixed charge on silicon.…”

“…An overview of c-Si surface passivation materials and stacks in terms of interface defect density ( D it ) and fixed charge density ( Q f ). D it with corresponding Q f are given for Al 2 O 3 , ,,− PO x /Al 2 O 3 , SiN x , − SiO x , − SiO x /SiN x , , Ga 2 O 3 , , AlN, ZrO 2 , and HfO 2. − The data are divided into materials with negative (left) and positive (right) fixed charge on silicon.…”

“…An overview of c-Si surface passivation materials and stacks in terms of interface defect density (D it ) and fixed charge density (Q f ). D it with corresponding Q f are given for Al 2 O 3 , 15,16,20−26 PO x /Al 2 O 3 , 19 SiN x , 27−32 SiO x , 33−35 SiO x /SiN x ,36,37 Ga 2 O 3 ,38,39 AlN,40 ZrO 2 ,41 and HfO 2.42−45 The data are divided into materials with negative (left) and positive (right) fixed charge on silicon. Other passivating materials, which are not shown because the magnitudes of D it or Q f have not been reported in the literature, include: Ta 2 O 5 (negative Q f ), TiO 2 (negative Q f ), Nb 2 O 5 (negative Q f ), and a-Si:H (very low D it ).…”

POx/Al2O3 stacks for surface passivation of Si and InP

“…act as passivating contact [30]. These requirements have led researchers to consider different materials for surface passivation of Si, Ge, and III-V semiconductors, including a-Si:H, Al 2 O 3 , SiN x , SiO x , TiO x , Ga 2 O 3 , HfO 2 , AlN, Ta 2 O 3 , ZrO 2 , ZnO, Nb 2 O 5 , or stacks thereof [23,29,[31][32][33][34][35][36][37][38][39][40][41][42][43][44], which have led to varying degrees of surface passivation. Continued research on surface passivation of these semiconductors is key to allow further device scaling, to enable devices based on a wider variety of semiconductor substrate materials, and finally to improve device performance.…”

Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation

“…Sputtering is an alternative technique for AlO x film deposition capable of providing reasonable surface passivation [4,5] and 18.5% [6] to 20% [7] solar cell efficiencies. Whereas the hydrogenation of dangling bonds at the silicon surface is an essential ingredient for its passivation, no specific source of hydrogen was used in previous work on sputtered AlO x .…”