Investigations on the parameters limiting the performance of CdS/SnS solar cell

Abstract

Summary Debutant analysis of the parameters impeding the efficiency of the CdS/SnS‐based photovoltaic device is the chief novelty of the present report. We have developed thin‐film heterojunction solar cells with the stacking sequence: glass/Al‐doped ZnO/CdS/SnS/In. The two crucial issues, band offsets and cell studies, are discussed in detail. The band offsets at the CdS/SnS interface have been systematically evaluated by semidirect X‐ray photoelectron spectroscopy. The calculated valance band offset (ΔEv) and conduction band offsets (ΔEc) are found to be 1.46 and −0.36 eV, respectively. The negative value of conduction band offset indicates that the junction formed is of type‐II (staggered‐type heterojunction). Electrical studies revealed power conversion efficiency of 0.32% with VOC, JSC, and fill factor as 170.61 mV, 7.26 mA/cm2, and 0.26, respectively. The impact of the offset values on the cell studies is clearly elucidated. The reasons for the low efficiency are spotlighted. Collectively, this article gives the overview of the systematic approach undertaken to get obvious picture about the barriers that limit the conversion efficiency of the CdS/SnS‐based solar cell and the measurements required for enhancing the efficiency of the SnS‐based solar device.

Ultrafast Hole Migration at the p–n Heterojunction of One-Dimensional SnS Nanorods and Zero-Dimensional CdS Quantum Dots

“…11−14 Recently, SnS has been widely used as an active absorber material in solar cell devices. 15 However, pristine SnS frequently suffers from low charge separation efficiency and trapping of charge carriers, which seriously affect the practical application of photocatalysis. Many efforts have been made to avoid these issues by combining SnS with other nanomaterials to form heterostructures.…”

“…Semiconductor p–n heterojunctions are a basic building block for any optoelectronic and technological application. − It improves the charge separation as well as the carrier transport and hence increases the lifetime of carriers by preventing excitonic recombination, which is highly desirable for device applications. Among them, 1D (IV–VI) p-type tin sulfide (SnS) has emerged as one of the promising candidate for its numerous applications, including photovoltaics, photocatalysis, and next-generation energy storage devices, , owing to its unique properties such as high stability and tunable band gap, higher optical absorption coefficient (>10 4 cm –1 ), and nontoxic and earth abundant elements. , Moreover, 1D semiconductor heterostructures demonstrate a large surface-to-volume ratio, which provides a large number of active sites that results in outstanding photocatalytic, optoelectronic, and gas-sensing properties. − Recently, SnS has been widely used as an active absorber material in solar cell devices . However, pristine SnS frequently suffers from low charge separation efficiency and trapping of charge carriers, which seriously affect the practical application of photocatalysis.…”