Investigations on the morphology, optical and photoresponse properties of PbS/CdS binary colloidal quantum dot thin film

He, Jungang; Yu, Yan; Zhang, Ling; Yi, Jianxin; Liu, Sisi; Kan, Hao; Zhang, Guangzu; Jiang, Shenglin

doi:10.1007/s10854-014-1904-4

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…As shown in figure 6(b), the responsivity varies linearly with the applied voltage with a maximum value of 0.61 A W −1 at 0.01 mW cm −1 and 20 V. The measured responsivity for the TlInSSe crystal is larger than the previously reported PbS-based photodetectors, such as PbS:Ag of 4×10 −3 A W −1 [27], PbS:C 60 of 7×10 −4 A W −1 [29], PbS:CdS of 0.022 A W −1 [30] and PbS:Au of 0.0016 A W −1 [31].…”

Section: Resultsmentioning

confidence: 61%

High performance visible light photodetector based on TlInSSe single crystal for optoelectronic devices

et al. 2019

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Owing to its high photosensitivity and excellent optoelectrical properties in the visible range, the TlInSSe single crystal is considered for use in high performance visible photodetectors. Herein, we report a detailed optoelectrical investigation of TlInSSe single crystal grown via the Bridgman technique. The photocurrent was observed to increase with an increase in the illumination intensity. The temperature-dependent photoconductivity under different illumination intensities was studied to understand the photogenerated charge transport mechanism in the TlInSSe crystal. A drop in activation energy was noticed from 0.278 eV (under dark conditions) to 0.114 eV (under illumination), attributed to the filling of trap states by photogenerated carriers. The photo-switching behavior was studied and the growth and decay times were found to be ∼310 and 300 ms, respectively. The photodetector device of the grown crystal was fabricated and the important figure of merit was determined for 532 nm laser light. The photodetector exhibits a responsitivity up to 0.61 A W−1, a detectivity up to 6.24 × 1011 Jones, and an external quantum efficiency up to 120%. These parameters decrease with an increase in the illumination intensity, but increase with applied voltage. These excellent optoelectrical properties make TlInSSe single crystal a highly competitive candidate for visible photodetector devices.

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Section: Resultsmentioning

confidence: 61%

High performance visible light photodetector based on TlInSSe single crystal for optoelectronic devices

et al. 2019

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Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Zhou

Ning

2020

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Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing, size‐tunable optoelectronic properties, and flexibility. Tremendous efforts including material engineering and device structure manipulation have been made to improve the performance of the photodetectors based on CQDs. In recent years, benefiting from the facial integration with materials such as 2D structure, perovskite and silicon, as well as device engineering, the performance of CQD IR photodetectors have been developing rapidly. On the other hand, to prompt the application of CQD IR photodetectors, scalable device structures that are compatible with commercial systems are developed. Herein, recent advances of CQD based IR photodetectors are summarized, especially material integration, device engineering, and scalable device structures.

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Lead sulphide nanocrystal photodetector technologies

2016

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2 Few other areas of study have uncovered the secrets of the universe like that of the interaction between light and matter, leading to many revolutionary scientific discoveries. The interaction of light, in particular with semiconducting materials, has enabled us to understand the behaviour of various fundamental phenomena and has laid the foundation of the optoelectronic systems that we rely on today. The majority of such systems necessitate the detection of light which is achieved via the use of photodetector devices. A photodetector converts incident photons into an electrical signal, which in the solid-state, is assembled together with an application-oriented readout integrated circuit (ROIC). Present-day commercially available photodetectors are typically made from gallium phosphide/silicon carbide (GaP)/(SiC), silicon (Si) and indium gallium arsenide/germanium (InGaAs)/(Ge) for detection in the ultraviolet (UV), visible and near-infrared (IR) regimes of the electromagnetic spectrum, respectively. For mid and far IR, lead sulphide (PbS), lead selenide (PbSe), indium antimonide (InSb), indium arsenide (InAs) and mercury cadmium telluride (HgCdTe) based photodetectors are commonly used. Photodetectors based on a photoemissive principle such as photomultiplier tubes (PMTs) are also widely used for ultrasensitive detection in the UV to near-IR spectral regime and are fabricated using alkali metals having a low workfunction. For applications demanding multispectral detection, 'two-colour' detectors are often manufactured with a bi-level structure, for example consisting of an IR transmitting Si photodiode mounted over an IR sensitive PbS photoconductor. Such a device structure has drawbacks that include added cost, increased complexity of device fabrication and associated issues in implementation. Furthermore, a significant majority of applications are based upon UV to near-IR light detection where the indirect bandgap of Si, the InGaAs epitaxial growth process, PMT bulkiness and high bias voltage requirement all present challenges and renders their use with flexible platforms impossible. As a result significant research effort continues to be expended on the development of a singlesystem multispectral photodetector to replace two or more detectors. In the last decade amongst all the candidate materials studied 1 PbS semiconductor nanocrystals (NCs), often referred as 'quantum dots', have emerged as the most promising material for the fabrication of 3 this type of photodetector. Such has been the progress in their development that reported PbS NC based photodetectors have already outperformed conventional state-of-the-art photodetectors in many aspects including low-cost room temperature device fabrication via solution processing, flexible substrate compatibility, broadband spectral sensitivity along with the figures of merit achieved, Fig 1a. In this review article, we present an overview of recent developments in PbS NC based photodetectors. We first provide a brief introduction to PbS NCs and their releva...

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Investigations on the morphology, optical and photoresponse properties of PbS/CdS binary colloidal quantum dot thin film

Cited by 3 publications

References 23 publications

High performance visible light photodetector based on TlInSSe single crystal for optoelectronic devices

High performance visible light photodetector based on TlInSSe single crystal for optoelectronic devices

Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Lead sulphide nanocrystal photodetector technologies

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