Investigations on Structural Properties of GaInN-GaN Multi Quantum Well Structures

Abstract

We studied the development of V-shaped defects in GaInN±GaN quantum well superlattices. We observed that these defects could not be suppressed by varying growth parameters like strain, In content, GaInN growth temperature etc. However, perfect superlattices without such defects could be grown by cycling the temperature between low (for the GaInN wells) and high temperatures (for the GaN barriers). Although a large hydrogen/nitrogen ratio in the carrier gas seems to hinder the defect formation in GaN±AlGaN superlattices, it was not possible to suppress the defect formation in a GaInN±GaN superlattice by decreasing the total nitrogen flow.

The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

“…that strive for smooth planar morphology and sharp interfaces within the InGaN/GaN stack. The growth of GaN barriers at elevated temperature [5], and introducing hydrogen ðH 2 ) during barrier growth [6,7] are believed to be the most efficient approaches for improving the surface morphology and thermal stability of InGaN/GaN QWs.…”

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

“…Therefore, various growth techniques have been employed that strive for smooth planar morphology and sharp interfaces within the InGaN/ GaN stack. Growth of barriers at elevated temperature [14], growth of GaN barriers in the presence of hydrogen [10,15] and growth interruption after QW growth [15,16] are believed to be the most efficient approaches for improving the morphology of InGaN/GaN heterostructures. A high growth temperature of the GaN barriers should promote the 2D growth mode and the regrowth of V-defects without the formation of inclusions.…”

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on

“…Based on the ''V''-like profile shape of the triangular pits, we can conclude that these pits are more like an open triangular inverted pyramids, i.e., the triangular pits are a kind of V-defect. The V-defect is a very typical one appearing in III-V semiconductor thin films, such as GaN, InGaN, and their quantum well structures [10][11][12][13][14][15]. However, such a V-type defect appearing in PbSe thin films has not been reported yet, and the origin for the formation of this kind of defects in PbSe film is not clear.…”