Investigations on resonant tunneling in III-V heterostructures

Guéret, P.; Rossel, C.; Marclay, E.; Meier, H. P.

doi:10.1063/1.343869

Cited by 69 publications

(13 citation statements)

References 13 publications

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“…The experimentally reported I-V curves exhibit a characteristic "plateaulike" behavior 5,22 and hysteresis. 20,21 The first view proposed by Goldman, Tsui, and Cunningham 4 attributed this entire behavior to "intrinsic bistability," that is, charge is dynamically built up and ejected from the well, and through an electrostatic feedback mechanism, two current states exist.…”

mentioning

confidence: 98%

Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures

1991

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Intrinsic high-frequency oscillations (^2.5 THz) in current and corresponding quantum-well density have been simulated for the first time for a fixed-bias voltage in the negative differential resistance (NDR) region of the current-voltage (I-V) characteristics of a resonant tunneling diode. Scattering and self-consistency are included. Hysteresis and "plateaulike" behavior of the time-averaged I-V curve are simulated in the NDR region. Intrinsic bistability is manifested by the phenomenon of unstable electron charge buildup and ejection from the quantum well.PACS numbers: 73.40.Gk The resonant tunneling of electrons through doublebarrier structures is known to produce a region of negative differential resistance (NDR) in the I-V relationship. This has been well established experimentally, 1 " 5 and a simple understanding of the phenomena may be obtained through analyzing the transmission coefficient of the one-dimensional resonant tunneling diode (RTD) profile. 6 " 9 Transmission-coefficient-based calculations can include self-consistency and duplicate gross features of RTD I-V curves, but they are impractical for simulating time-dependent nonlinear effects, such as occur when the bias is suddenly switched (transient response or frequency-dependent behavior) and other time-dependent nonlinear phenomena such as the high-frequency oscillations at fixed bias in the NDR region simulated in this paper.As the full characterization of RTD devices requires simulating a time-evolving system, the Wigner distribution function 10 (WDF) approach has emerged as the most promising method. 11 " 15 Scattering within the device and self-consistency 13,15 " 17 may be included, and the WDF approach has the added advantage of lending itself to a "particle" interpretation. 15,16 ' 18 We present here a more accurate and fully time-dependent and self-consistent quantum transport simulation 15 which includes scattering as a function of temperature and which demonstrates current oscillations at a fixed bias. We note, however, that other time-dependent and selfconsistent scattering calculations have been reported prior to the current work, 12 " 14 but they differ from ours in some key respects. 19 The method we have chosen to incorporate self-consistency and scattering allows us to address more accurately the controversial "bistability" issue reported 4,20 and challenged 21 previously.The experimentally reported I-V curves exhibit a characteristic "plateaulike" behavior 5,22 and hysteresis. 20,21 The first view proposed by Goldman, Tsui, and Cunningham 4 attributed this entire behavior to "intrinsic bistability," that is, charge is dynamically built up and ejected from the well, and through an electrostatic feedback mechanism, two current states exist. Sollner, 21 who represents the second view, disagrees, claiming that instead of Goldman's hysteresis being due to a charging of the well, it is due to external circuit-induced oscillations of the current in the NDR region of the device. We have observed intrinsic oscillations (which have a f...

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confidence: 98%

Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures

1991

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“…Compact formulas for the transparencies of GaAs/AlGaAs barriers are given in Ref. 15. Typical values are Γ L,R ∼ 0.1...1 meV for barrier widths of the order of 10 nm 15 .…”

Section: Model Of the Dbrt Structurementioning

confidence: 99%

Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures

Rodin

Schoell

2003

Journal of Applied Physics

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We present a theoretical analysis and numerical simulations of lateral current density fronts in bistable resonant-tunneling diodes with Z-shaped current-voltage characteristics. The bistability is due to the charge accumulation in the quantum well of the double-barrier structure. We focus on asymmetric structures in the regime of sequential incoherent tunneling and study the dependence of the bistability range, the front velocity and the front width on the structure parameters. We propose a sectional design of a structure that is suitable for experimental observation of front propagation and discuss potential problems of such measurements in view of our theoretical findings. We point out the possibility to use sectional resonant-tunneling structures as controllable three-terminal switches.

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“…In an experiment conducted by Guéret et al, 8 the barriers consist of two separated layers of aluminium gallium arsenide ͑Al x Ga 1Ϫx As͒ in a gallium arsenide ͑GaAs͒ sample. The thickness of the barriers was varied from 7.5 nm to 31 nm.…”

Section: ͑424͒mentioning

confidence: 99%

“…[5][6][7] Certain GaAs/Al x Ga 1Ϫx As double-barrier quantum wells show diffusive broadening of their transmission resonance. 8 We study the average transmission properties of semiballistic systems using the scalar wave approximation in the limit of point scatterers. We assume that neither finitetemperature effects nor Anderson localization are relevant.…”

Section: Introductionmentioning

confidence: 99%

Theory of semiballistic wave propagation

Mosk¹,

Nieuwenhuizen²,

Barnes

1996

Phys. Rev. B

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Theory of semiballistic wave propagationMosk, A.J.; Nieuwenhuizen, T.M.; Barnes, C.L. General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Wave propagation through waveguides, quantum wires, or films with a modest amount of disorder is in the semiballistic regime when in the transversal direction͑s͒ almost no scattering occurs, while in the long direction͑s͒ there is so much scattering that the transport is diffusive. For such systems, randomness is modeled by an inhomogeneous density of pointlike scatterers. These are first considered in the second order Born approximation and then beyond that approximation. In the latter case, it is found that attractive point scatterers in a cavity always have geometric resonances, even for Schrödinger wave scattering. In the long sample limit, the transport equation is solved analytically. Various geometries are considered: waveguides, films, and tunneling geometries such as Fabry-Pérot interferometers and double-barrier quantum wells. The predictions are compared with new and existing numerical data and with experiment. The agreement is quite satisfactory. ͓S0163-1829͑96͒00923-X͔

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Investigations on resonant tunneling in III-V heterostructures

Cited by 69 publications

References 13 publications

Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures

Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures

Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures

Theory of semiballistic wave propagation

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