Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes

Abstract

We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters.

Многообразие Свойств Приборных Структур На Основе Нитридов Элементов III Группы, Связанное С Модификацией Фрактально-Перколяционной Системы

“…Кроме того, протяженные дефекты и случайные флуктуации состава твердого раствора явля-ются основой для образования фрактально-перколяцион-ной системы (ФПС). Существование ФПС проявляется в особенностях вольт-амперных характеристик (ВАХ) приборных структур, наблюдавшихся в многочисленных работах [7][8][9]. В работах приводятся такие особенности ВАХ светодиодов, как значения фактора идеальности n > 2 при малых смещениях, присутствие нелинейных шунтов, изменяющих проводимость на порядки вслед-ствие изменения характера организации наноматериа-ла [7,10].…”

Properties of Defective Regions Observed by Photoluminescence Imaging for GaN-Based Light-Emitting Diode Epi-Wafers

“…Tunneling is another important cause of the forward leakage [17][18][19][20][21]. A parasitic diode-like tunnel current at the low-to-intermediate bias deforms the I-V curves from their typical shapes.…”

“…Huge forward leakages up to the intermediate bias region (~1.2-1.9 V) were observed for the chips with DSDRs. Many researches on leakages of nitride based LEDs reported that the leakages resulted from the defects present in the active regions [16][17][18][19][20][21]. Several research groups have studied the abnormality of the I-V curve by employing equivalent-circuit models incorporating a parallel resistance and a parasitic diode [14,[21][22][23].…”

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

“…Nevertheless, a GaN homojunction p-n diode with near unity ideality has been recently demonstrated 23 while, with improving device quality, an InGaN LED with an electrical ideality factor of 1.1 has been shown. 24 The low ideality was revealed by minimizing the device resistance and was correlated with a better internal quantum efficiency in the LED. 24 Using current continuity an equivalent circuit for a GaN LED can be obtained.…”

“…24 The low ideality was revealed by minimizing the device resistance and was correlated with a better internal quantum efficiency in the LED. 24 Using current continuity an equivalent circuit for a GaN LED can be obtained. 25 The total current J, whether electrical or optically generated, can be presented as J = J rad + J nrad + J t + J leak + J Auger where J rad is the radiative recombination current component, J nrad is the non-radiative defect related recombination current, J t is tunneling current through the junction, J leak represents a carrier leakage current and J Auger is the current component related to Auger recombination.…”