1987
DOI: 10.1002/app.1987.070340235
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Investigations of the action of flame retardants in cellulose. II: Investigation of the flame‐retardant action of polyphosphonitride in cellulose

Abstract: SynopsisPure regenerated cellulose fibers and those containing various amounts of phosphorus nitride were pyrolyzed under different conditions in the temperature range of 150-440OC. Easily volatile liquid pyrolysis products, the tar fraction of limited volatility, and the charred residue were determined gravimetrically. The liquid volatiles were analyzed by combined gas chromatography/mass spectrometry for their water content. The tar fraction and the charred residue were inspected by infrared (IR) spectroscop… Show more

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Cited by 16 publications
(16 citation statements)
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“…It is used industrially as af lame retardant, as a" getter" materialf or the elimination of oxygen duringt he production of incandescent andt ungsten halogen lamps, and as agate insulator material in metal insulator semiconductor field-effect transistors (MISFETs). [8][9][10] Vitreous compounds in the system Li-Ca-P-N exhibit remarkabler efractive indicesa nd hardness values. [11,12] Pseudo-binary phosphorus nitrides PON and HPN 2 are mainly used in the field of flame retardation.…”
Section: Introductionmentioning
confidence: 99%
“…It is used industrially as af lame retardant, as a" getter" materialf or the elimination of oxygen duringt he production of incandescent andt ungsten halogen lamps, and as agate insulator material in metal insulator semiconductor field-effect transistors (MISFETs). [8][9][10] Vitreous compounds in the system Li-Ca-P-N exhibit remarkabler efractive indicesa nd hardness values. [11,12] Pseudo-binary phosphorus nitrides PON and HPN 2 are mainly used in the field of flame retardation.…”
Section: Introductionmentioning
confidence: 99%
“…Phosphorus(V) nitride P 3 N 5 has long been known as a refractory binary nitride and has been used in a multitude of applications, for example, as a gate insulator material in metal‐insulator semiconductor field‐effect transistors (MISEETs),1–3 as a getter material in incandescent and tungsten‐halogen lamps,4 or as a flame retardant 5. The compound has been known for quite a long time,6 even though its structure was not solved until 1997 7.…”
Section: Introductionmentioning
confidence: 99%
“…[17][18][19][20] Phosphorus nitride P 3 N 5 , already described in 1862, [21] has been used for several applications, for example as flame retardant or as gate insulator material in electronic devices for a long time as well. [22][23][24][25] However, its crystal structure was only elucidated as late as 1997. [6,7] Besides vertex sharing tetrahedra P 3 N 5 also exhibits edge sharing PN 4 units thus representing a nice example for the varied bonding possibilities of N in tetrahedra network structures.…”
Section: Introductionmentioning
confidence: 99%