Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs

Huang, Wenjun; Miao, Xiangyu; Liu, Zhaojun

doi:10.3390/mi14030566

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…Different sizes of hollow cylindrical Micro-LEDs patterns were constructed through lithography by Micro Writer ML3 and then it was dry-etched by ICP using SiO2 as a hard mask. After cleaning the mask with buffered HF (BOE), 110 nm indium-tin oxide (ITO) was deposited on the ring-shaped p-GaN via magnetron sputtering and annealed at 600 °C with 80% N2 and 20% O2 for 5 min using rapid thermal annealing to achieve ohmic contact [9]. Then, 50 nm Al2O3 sidewall passivation was performed by thermal ALD at 300 ℃.…”

Section: Methodsmentioning

confidence: 99%

77‐2: Quantum‐Dot Color Conversion Achieved by A Novel Structure of Hollow Cylindrical Blue MicroLED

Huang,

Lin,

Liu

2023

Symp Digest of Tech Papers

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This study proposes a novel design for achieving color conversion in micro light‐emitting diodes (Micro‐LEDs) using a hollow cylindrical structure. Instead of printing quantum dots (QDs) on the upper surface of the Micro‐LEDs, QDs are printed in a hollow place created by designing hollows of varying sizes and applying a layer of highly reflective metal to the top and outer walls. The design of this structure confines the emission light to the hollows, reduces photon leakage, and increases the path length of the excitation light in the quantum dot area. The color conversion capabilities of 60, 70, 80, and 90 μm hollows were investigated, and a 3×3 array was demonstrated. Using this approach, the thickness of the quantum dots on the upper surface of the LED can be reduced, without the need for a thick black matrix for reducing the problem of light crosstalk. This hollow cylindrical design presents a promising new approach for achieving color conversion in Micro‐LEDs, with potential applications in displays and lighting technologies.

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Section: Methodsmentioning

confidence: 99%

77‐2: Quantum‐Dot Color Conversion Achieved by A Novel Structure of Hollow Cylindrical Blue MicroLED

Huang,

Lin,

Liu

2023

Symp Digest of Tech Papers

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“…50 In addition, a low-temperature sol-gel process has been reported to be able to minimize the generation of defects during the sidewall passivation process. 75,93 For InGaN/GaN-based blue nano-LED arrays, device performance with sol-gel SiO 2 passivation was compared with that of PECVD SiO 2 passivation. 75 EQEs were obtained from 60 pixels, with each pixel consisting of 6-9 nanorods (diameter: 580 nm) fabricated with different forms of SiO 2 passivation.…”

Section: Effective Passivation Of Sidewall Surfacementioning

confidence: 99%

Recent advances in micro-pixel light emitting diode technology

Park,

Pristovsek,

Amano

et al. 2024

Applied Physics Reviews

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Display technology has developed rapidly in recent years, with III–V system-based micro-light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical limitations of current display systems related to their lifetime, brightness, contrast ratio, response time, and pixel size. However, for μLED displays to be successfully commercialized, their technical shortcomings need to be addressed. This review comprehensively discusses important issues associated with μLEDs, including the use of the ABC model for interpreting their behavior, size-dependent degradation mechanisms, methods for improving their efficiency, novel epitaxial structures, the development of red μLEDs, advanced transfer techniques for production, and the detection and repair of defects. Finally, industrial efforts to commercialize μLED displays are summarized. This review thus provides important insights into the potential realization of next-generation display systems based on μLEDs.

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High-efficiency green light emission from InGaN/GaN using localized surface plasmon resonance tuned by combination of Ag nanoparticles and dielectric thin film

Kamei,

Kaito,

Matsuyama

et al. 2024

Opt. Express

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We achieved significant enhancements in green light emission (550 nm) from InGaN/GaN quantum wells (QWs) by tuning the localized surface plasmon resonance (LSPR) of self-assembled Ag nanoparticles (NPs) through the application of a SiO2 thin film. The LSPR wavelength of Ag NPs was shifted towards shorter wavelengths by 80 nm using a 5 nm SiO2 layer to separate Ag NPs from GaN surface, thereby aligning it effectively with the green region. This strategic placement of Ag NPs and a 5 nm SiO2 film resulted in significant enhancements of photoluminescence (PL) by 15- and 8.8-fold with 5 and 11 nm GaN cap layers, respectively. The LSPR of Ag NPs on a SiO2 thin film facilitated a longer possible distance for the coupling between surface plasmons (SPs) and excitons in a QW. Traditionally, the distance between SPs-generating metal and a QW has been maintained at 10 nm to achieve substantial enhancements. Remarkably, even with a 25 nm cap layer, Ag NPs on a 5 nm SiO2 film boosted PL by 3.1-fold. The enhancements attributable to Ag NPs on SiO2 films were superior, reaching up to 4.8 times greater than those of Ag NPs on GaN surfaces. Additionally, the PL enhancement factors calculated using the finite differential time domain (FDTD) method aligned closely with experimental results.

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Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs

Cited by 4 publications

References 32 publications

77‐2: Quantum‐Dot Color Conversion Achieved by A Novel Structure of Hollow Cylindrical Blue MicroLED

77‐2: Quantum‐Dot Color Conversion Achieved by A Novel Structure of Hollow Cylindrical Blue MicroLED

Recent advances in micro-pixel light emitting diode technology

High-efficiency green light emission from InGaN/GaN using localized surface plasmon resonance tuned by combination of Ag nanoparticles and dielectric thin film

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