Investigations of rf shunt airbridge switches among different environmental conditions

Schauwecker, B.; Mehner, Jan; Strohm, K.M.; Haspeklo, H.; Luy, J.-F.

doi:10.1016/j.sna.2004.02.040

Cited by 20 publications

(5 citation statements)

References 9 publications

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“…RF MEMS switches can be classified into direct current (DC) series contact switches [28], DC shunt switches [29], capacitive series switches [30] and capacitive shunt switches [31], according to the method of contact. The DC contact switches (series and shunt) can operate at a wide frequency from DC to gigahertz (GHz), and they show better insertion loss and isolation in the frequency range.…”

Section: Brief Introduction To Rf Mems Switchesmentioning

confidence: 99%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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Surface roughness seriously affects the electromagnetic performance of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the effects of different film thickness values, substrate topologies, sputtering powers, gas pressures, gas ratios, substrate temperatures and annealing temperatures on the surface roughness of deposited thin films. At the same time, the mechanisms of the deposition parameters on the surface roughness are also analyzed. The effects of surface roughness on the electromagnetic performance of capacitive RF MEMS switches are then discussed in detail. Finally, two different methods for improving the surface roughness of deposited thin films are given.

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Section: Brief Introduction To Rf Mems Switchesmentioning

confidence: 99%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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“…In this section we present numerical simulations in the study of a real-world example of Problem P, the microelectromechanical switches [19]; the numerical simulations are focused on the contact process of a deformable electro-viscoelastic body on a conductive dielectric foundation. Microelectromechanical systems (MEMS) are being recognized as enabling components to switch or tune radio frequency (rf) components, modules or systems in manufacturing and operation.…”

Section: Numerical Simulationsmentioning

confidence: 99%

Modeling and analysis of the unilateral contact of a piezoelectric body with a conductive support

Barboteu

Sofonea

2009

Journal of Mathematical Analysis and Applications

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We consider a mathematical model which describes the quasistatic process of contact between a piezoelectric body and an electrically conductive support, the so-called foundation. We model the material's behavior with a nonlinear electro-viscoelastic constitutive law; the contact is frictionless and is described with the Signorini condition and a regularized electrical conductivity condition. We derive a variational formulation for the problem and then we prove the existence of a unique weak solution to the model. The proof is based on arguments of nonlinear equations with multivalued maximal monotone operators and fixed point. Then we introduce a fully discrete scheme, based on the finite element method to approximate the spatial variable and the backward Euler scheme to discretize the time derivatives. We treat the unilateral contact conditions by using an augmented Lagrangian approach. We implement this scheme in a numerical code then we present numerical simulations in the study of two-dimensional test problems, together with various comments and interpretations.Crown

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“…Due to the advantages of having a simple driving structure and fast response speed, electrostatic driving has become the preferred driving method for RF MEMS switches [ 1 ]. The reported electrostatic drive switches include all four types: series contact, series capacitor, shunt contact, and shunt capacitive [ 9 , 10 , 11 , 12 , 13 ]. Among them, electrostatic-driven direct contact switches have exhibited several advantages over other types of switches, such as better isolation in the commonly used low-frequency band and higher reliability [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

Implementation of Highly Reliable Contacts for RF MEMS Switches

Jiang,

Wang,

Huang

et al. 2024

Micromachines

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A contact is the key structure of RF MEMS (Radio Frequency Microelectromechanical System) switches, which has a direct impact on the switch’s electrical and mechanical properties. In this paper, the implementation of highly reliable contacts for direct-contact RF MEMS switches is provided. As a soft metal material, gold has the advantages of low contact resistance, high chemical stability, and mature process preparation, so it is chosen as the metal material for the beam structure as well as the contacts of the switch. However, a Pt film is used in the bottom contact area to enhance the reliability of the contact. Three kinds of contacts with various shapes are fabricated using different processes. Particularly, a circular-shaped contact is obtained by dry/wet combined processes. The detailed fabrication process of the contacts as well as the Pt film on the bottom contact area are given. The experimental test shows that the contact shape has little effect on the RF performance of the switches. However, the circular contact shows better reliability than other contacts and can work well even after 1.2 × 109 cycles.

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Investigations of rf shunt airbridge switches among different environmental conditions

Cited by 20 publications

References 9 publications

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Modeling and analysis of the unilateral contact of a piezoelectric body with a conductive support

Implementation of Highly Reliable Contacts for RF MEMS Switches

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