Investigations of nanostructured porous PbTe films with x-ray diffractometry and reflectometry

Abstract

In this work application of x-ray total external reflection method for the determination of the porosity value of PbTe and PbSe epitaxial films on silicon substrates subjected to anodic electrochemical etching in a Norr electrolyte was carried out. It is shown that the porosity values of the films can be in the range of 10-68% depending on the anodizing conditions. Triple-crystal x-ray diffractometry method was utilized for the estimation of quantitative characteristics of the pore dimensions along different directions. Nanometer-range pore dimensions and shape are estimated.

Abnormal conductivity behavior in porous lead telluride films

“…The conditions of the anodic electrochemical treatment for the particular studied samples are summarized in Table 1 . The results of the structural and morphological parameter investigations for the porous layers synthesized under these conditions are described in [ 6 , 7 ]. The surficial mesoporous nanostructured layer had a thickness ( d por ) up to 200 nm.…”

“…The porosity value, as determined with X-ray reflectometry method, was 41% to 52%. The experimental setup, measurement technique, and working formulas for determining the porosity of the samples by X-ray reflectometry are described in full detail in [ 6 , 7 ]. The effective conductivity type of the PbTe films after treatment did not change and remained n-type.…”