Investigations of interatomic interaction in InAs-InAs 1-x Sb x heterostructures on a base of x-ray diffractometry

Abstract

Hetero-transitions on a base of InAs and AnSb compounds permitted to obtain cheap light diodes and detectors with the atmosfere maximal transparency region sensibility. There is assumed simultaneously, that the phon radiation in InAs-InAs1Sb is not large, which positively effects on receiver parameters. Changing the composition of InAs-InAs1 Sb solution., one may obtain the structure with the width offorbidden zone ofthe want of 0.35to 0,1 eV.There is developed the heterostructures crystalline lattice parameters determing method (for substrate and film) with the DRON-3M x-ray diffractometer. There was found the nonlinear dependence of the heterostructures lattice parameter on the composition. Investigations of interatomic interaction in dependence on composition and also on the for bidden zone width Eg(x) have show, that solid solutions InAs-lnAs1Sb may be used for the obtaining of infra-red receiver.