Investigation on the p-type formation mechanism of nitrogen ion implanted ZnO thin films induced by rapid thermal annealing

Huang, Zheng; Ruan, Haibo; Zhang, Hong; Shi, Dan; Li, Wanjun; Qin, Guoping; Wu, Fang; Fang, Liang; Kong, Chunyang

doi:10.1364/ome.9.003098

Cited by 18 publications

(13 citation statements)

References 53 publications

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“…The transformation of ZnO:N film from n-type to p-type by 550 • C RTA is similar to the appearance of p-type regions in N-implanted ZnO single crystals after annealing at 500 • C, observed by deep-level transient spectroscopy (DLTS) measurements [44]. Similar transformations of N-implanted n-type ZnO films to p-type ones have been observed after RTA treatment at 900 • C [45].…”

Section: Electric Charge Transport Propertiessupporting

confidence: 76%

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

et al. 2021

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Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

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Section: Electric Charge Transport Propertiessupporting

confidence: 76%

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

et al. 2021

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“…As the value of E d for Zn is less than that of the O atom, the concentration of implantation-induced V Zn becomes always larger as compared with V O at any fluence of any ion. Similarly, in the process of N implantation into ZnO thin films, the corresponding V Zn and V O depth profiles are shown in Figure b, which indicates that the implantation of high-energy N ions rather induces a reasonable amount of vacancy defects in ZnO matrix, especially the V Zn which is desired for the realization of acceptor doping in ZnO:N films . However, SRIM only predicts the generated displacements of the target atoms.…”

Section: Ion Implantationmentioning

confidence: 97%

“…Similarly, in the process of N implantation into ZnO thin films, the corresponding V Zn and V O depth profiles are shown in Figure 3b, which indicates that the implantation of high-energy N ions rather induces a reasonable amount of vacancy defects in ZnO matrix, especially the V Zn which is desired for the realization of acceptor doping in ZnO:N films. 116 However, SRIM only predicts the generated displacements of the target atoms. The majority of such defects are immediately annihilated, which is the origin of radiation hardness of ZnO.…”

Section: Ion Implantationmentioning

confidence: 99%

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Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

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“…As the search continues, nanostructure containing ZnO came across as a preferable solution above considering how easy it is to operate, manufacture and monitor [25,26]. The nanostructure containing ZnO with the refractive index of (n= 2.0) can act as a slope refractive record layer between GaN and air with refractive indices respectively being (n = 2.5) and (n = 1), providing that other elements that follow such as thermal performance, duration, and antecedent focus are accounted for.…”

Section: Introductionmentioning

confidence: 99%

The Effects of ZnO particles on the color homogeneity of phosphor-converted high-power white LED light sources

Loan

Anh

2020

IJECE

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Color homogeneity is one of the goals to continuously improve WLED. Among the methods for enhancing the color uniformity of WLEDs, improving scattering in phosphor layer is considered to be the most effective. In this paper, ZnO is used for that purpose. The results show that ZnO particle size significantly affects scattering in the phosphor layer, which is a vital factor to analyze scattering, scattering sand surface, scattering coefficient and scattered phase function C_sca (D,λ), μ_sca (λ) and ρ(θ,λ). In addition, the concentration of ZnO was also analyzed with values from 2% to 22%. Color homogeneity depends not only on size but also on the concentration of added ZnO. Therefore, color homogeneity control is the control of ZnO size and concentration. The proposed result is 10% ZnO for the highest lumen of LED. With 14% and 500 nm of ZnO particles, ΔCCT reaches the lowest. Depending on the production needs, manufacturers can choose the most appropriate way. However, with both required lumen and ΔCCT, 14% ZnO is suitable for ZnO sizes.

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Investigation on the p-type formation mechanism of nitrogen ion implanted ZnO thin films induced by rapid thermal annealing

Cited by 18 publications

References 53 publications

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

The Effects of ZnO particles on the color homogeneity of phosphor-converted high-power white LED light sources

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