2008
DOI: 10.1117/12.781446
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Investigation on the linewidth enhancement factor of multiple longitudinal mode semiconductor lasers

Abstract: We present a theoretical and experimental research of the linewidth enhancement factor or factor in multiplelongitudinal mode semiconductor lasers. In this work, several methods originally developed for single-mode lasers have been adapted for their use with multiple-longitudinal mode lasers and applied to each mode of several Fabry-Perot lasers at a time. The concepts of material LEF and device LEF are compared and discussed.

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Cited by 1 publication
(2 citation statements)
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“…As a different but much related family of applications, different laser-related parameters characteristic of semiconductor lasers, such as linewidth [Giuliani 2000], or the linewidth enhancement factor (LEF) ] [Villafranca 2008] have been measured using the OFI technique.…”
Section: A42 Measurement Of Physical Parametersmentioning
confidence: 99%
See 1 more Smart Citation
“…As a different but much related family of applications, different laser-related parameters characteristic of semiconductor lasers, such as linewidth [Giuliani 2000], or the linewidth enhancement factor (LEF) ] [Villafranca 2008] have been measured using the OFI technique.…”
Section: A42 Measurement Of Physical Parametersmentioning
confidence: 99%
“…Where ν s is the optical frequency of the laser in free running state, τ l = 2μl/c is the active cavity round trip delay, μ is the group refractive index without feedback, and α is the LEF of the laser, which depends on the characteristics of the laser and can be measured experimentally [Villafranca 2008] [ Henning 1983].…”
Section: B Theoretical Modelmentioning
confidence: 99%