Investigation on the formation mechanism of p-type ZnO:In-N thin films: experiment and theory

Qin, Guoping; Zhang, H.; Li, Wanjun; Ruan, Haibo; Wang, J.; Wang, D.; Fang, Liang; Kong, Chunyang

doi:10.1007/s10854-019-00906-z

Cited by 7 publications

(3 citation statements)

References 32 publications

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“…The PL spectra of all the p-type Ag-N dual-doped ZnO thin film samples could be deconvoluted to several peaks emanating due to the transition between band edges and the defects and dopant levels [ 38 ]. Using a deconvolution of six peaks with Gaussian profiles, in the three samples it was found that this strong ultraviolet emission signal is composed of four emissions, which are free exciton emission (FX), free-electron-to-neutral acceptor emission (FA), donor-acceptor pair recombination emission (DAP) and zinc interstitial energy level (Zn i ) to the valence band emission (Zn i to VB), from lower to higher wavelength respectively [ 39 , 40 ]. The FX emission in the three samples is the signal emitted at the lowest wavelength (highest energy) and is located at 358.55 nm (3.45 eV), 358.71 nm (3.45 eV), 352.87 nm (3.51 eV) for the samples deposited from the lowest to highest oxygen flux, respectively.…”

Section: Resultsmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

Avelar-Muñoz,

Gómez-Rosales,

Ortiz-Hernández

et al. 2024

Micromachines

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p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing, they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide, and achieving that; the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to 10−3 Ω·cm, Hall mobility of tens cm2/V·s, and a hole concentration from 1017 to 1019 cm−3. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

Avelar-Muñoz,

Gómez-Rosales,

Ortiz-Hernández

et al. 2024

Micromachines

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“…Compared with other methods, doping N by the ion implantation method could better improve the concentration of N in p-ZnO and accurately control the concentration of N. At the same time, the presence of In in the film solved the problem of the low solid solubility of N in ZnO and theoretically could improve the p-type conductivity of the film. 42 After annealing at 580 °C for 25 min, the p-type conductivity of the implanted films reached the best. The hole concentration was 1.27 × 10 18 cm −3 , the resistivity was 2.06 Ω cm, the Hall mobility was 2.39 cm 2 V −1 s −1 , and the acceptable energy level was 128 meV.…”

Section: Shallowing the Acceptor Energy Levelmentioning

confidence: 98%

“…The injected energy was 80 keV, and the dose was 1 × 10 17 cm –2 . Compared with other methods, doping N by the ion implantation method could better improve the concentration of N in p-ZnO and accurately control the concentration of N. At the same time, the presence of In in the film solved the problem of the low solid solubility of N in ZnO and theoretically could improve the p-type conductivity of the film . After annealing at 580 °C for 25 min, the p-type conductivity of the implanted films reached the best.…”

Section: Shallowing the Acceptor Energy Levelmentioning

confidence: 99%

ZnO with p-Type Doping: Recent Approaches and Applications

Yang,

Wang,

et al. 2023

ACS Appl. Electron. Mater.

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ZnO is a significant semiconductor material with the characteristics of direct band gap, large exciton binding energy, and easy growth of high-quality nanostructures, and it is widely used in various fields. However, obtaining high-quality p-type ZnO has become a significant obstacle to the wide application of ZnO. The research on p-ZnO started several decades ago and is regarded as the research focus. Many researchers have obtained high-quality p-ZnO by chemical vapor deposition (CVD) and physical vapor deposition (PVD). To obtain high-quality p-ZnO, researchers have used some “better” techniques to improve the crystal quality and mobility of p-ZnO, such as molecular beam epitaxy (MBE) and post-treatment. This review provides an overview of some methods for obtaining high-quality p-ZnO, such as increasing the acceptor concentration, shallowing acceptor energy levels, and reducing donor defects. In addition, we also review the applications of p-ZnO in LEDs, UV detectors, thin-film transistors, gas sensing, bionic materials, and other fields.

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