Abstract:This paper investigates the effect of storage time on the bond strength of plasma-activated silicon (Si) wafers. Plasma activation was carried out in a reactive ion etch chamber using O2 gas. The activated wafers were stored in a clean room environment for specific time intervals before pre-bonding them (in a high vacuum environment) using a substrate bonder. Steps involved in wet chemical activation and pre-bonding of the wafers were discussed in detail. The pre-bonded wafers were thermally annealed. The bond… Show more
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