Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT

Ren, Na; Hu, Hao; Lyu, Xianjun; Wu, Jiupeng; Xu, Hongyi; Li, Ruigang; Zuo, Zheng; Wang, Kang; Sheng, Kuang

doi:10.1016/j.sse.2018.11.010

Cited by 36 publications

(20 citation statements)

References 6 publications

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“…6 compares the avalanche energy capability of 900 V/11.5 A SiC MOSFET and 600 V/16 A Si IGBT. The same current rating SiC MOSFET and Si IGBT have similar avalanche energy (105 and 104 mJ) at 75 µH inductance load [15]. The SiC die size is approximately five times smaller than that of the same current rating Si IGBT.…”

Section: Ruggedness Of Sic Mosfetsmentioning

confidence: 99%

“…Many research efforts have been devoted to investigating the ruggedness of commercial SiC MOSFETs under harsh conditions. Extensive characterisation studies of SiC MOSFETs' endurance capability under extreme conditions including unclampedinductive-switching (UIS) stress and short-circuit (SC) stress have been reported [11][12][13][14][15][16][17]. Experimental results show that the state-ofthe-art commercial SiC MOSFETs still have weaker SC capabilities than the Si IGBT counterpart [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…For example, most of 1200 V commercial SiC MOSFETs often fail within 10 μs at maximum operation gate voltage, which is much shorter than the Si IGBT counterpart. The avalanche capability and failure mechanism of commercial discrete SiC MOSFETs and power modules are investigated under single pulse avalanche stress [14][15][16][17]. The wide bandgap of SiC material enables better avalanche ruggedness of SiC MOSFETs because the thermally generated carrier concentration of SiC device is much smaller than that of Si devices [14].…”

Section: Introductionmentioning

confidence: 99%

“…The wide bandgap of SiC material enables better avalanche ruggedness of SiC MOSFETs because the thermally generated carrier concentration of SiC device is much smaller than that of Si devices [14]. Experimental results show SiC MOSFETs can withstand 50% higher current density than Si IGBT at the same amount of energy, and the avalanche withstand time is also longer compared to Si IGBT [15]. However, the smaller chip size, thinner active layer thickness, and process imperfections of SiC MOSFETs partially counteract the advantage of SiC material during avalanche stress, especially at large inductance condition [16, 17].…”

Section: Introductionmentioning

confidence: 99%

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Review and analysis of SiC MOSFETs’ ruggedness and reliability

Wang

Jiang

2020

IET Power Electronics

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SiC MOSFETs (silicon carbide metal-oxide semiconductor field-effect transistors) are replacing Si insulated gate bipolar transistors in many power conversion applications due to their superior performance. However, ruggedness and reliability of SiC MOSFETs are still big concern for their widespread applications in the market, especially in safety-critical applications. The objective of this study is to provide a comprehensive picture on the ruggedness and reliability of commercial SiC MOSFETs, discover their failure or degradation mechanism, and propose some possible mitigation methods through both literature survey and in-depth analysis. The ruggedness of SiC MOSFETs discussed here includes short-circuit (SC) ruggedness, avalanche ruggedness, and their failure mechanism. The reliability issues include gate oxide reliability, degradation under high-temperature bias stress, repetitive SC stress, avalanche stress, power cycling stress, body diode's surge current stress, and their degradation mechanism. Furthermore, this study discusses methods and solutions to improve their ruggedness and reliability.

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Section: Ruggedness Of Sic Mosfetsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Review and analysis of SiC MOSFETs’ ruggedness and reliability

Wang

Jiang

2020

IET Power Electronics

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“…At present, the traditional silicon (Si) and gallium arsenide (GaAs) solders have been unable to meet the requirements of working environment characterized by high temperature, high-power and high-frequency, due to the limitations of the materials themselves. And their performances could not get a considerable progress from the manufacturing process or structural optimization [1][2][3]. Silicon carbide (SiC) material has better material properties has shown a broader prospect in electronic packaging, which is attributed to its high strength Si-C bonding [4].…”

Section: Introductionmentioning

confidence: 99%

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Zhang

Huang²,

Cheng

et al. 2020

Frattura Ed Integrità Strutturale

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Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.

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The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT

Cited by 36 publications

References 6 publications

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

The role of power device technology in the electric vehicle powertrain

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