Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Chang, Tun Jen; Liu, Chien; Fan, Chia Chi; Hsu, Houtse; Chen, Hsuan Han; Chen, Wan Hsin; Fan, Yu Chi; Lee, Tsung Ming; Lin, Chien Liang; Ma, Jun; Zheng, Zhigang; Cheng, Chun Hu; Wang, Shih An; Chang, Chun Yen

doi:10.1016/j.vacuum.2019.04.045

Cited by 14 publications

(10 citation statements)

References 13 publications

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“…Therefore, the endurance of sample D is better at the annealing temperature of 400 °C. Furthermore, examination of the endurance and RTA temperatures of the BE with As‐imp samples and other HfO 2 ‐based capacitors, [ 12,16,22,24,35–49 ] revealed as shown in Figure 3c, that compared with previous reports, our BE with As‐imp samples has almost the highest endurance at the RTA temperatures of 350 °C and 400 °C, demonstrating that the BE with As‐imp can effectively improve the endurance in low thermal budget. In addition to improved endurance, the retention and imprint of capacitors with As‐imp at the BE were improved compared with the capacitors without As‐imp at the BE, as shown in Figures S4 and S5 of the Supporting Information.…”

Section: Resultssupporting

confidence: 59%

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Tian

Yin

et al. 2022

Adv Materials Inter

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HfO2‐based ferroelectric memory is one of the most attractive candidates for embedded memory in future monolithic‐M3D integrated‐circuit (IC). However, ferroelectricity and endurance will degrade at lower annealing temperatures due to the limitation of the M3D‐IC in thermal budget, which significantly inhibits its potential for many applications. In this work, a novel process technology using As5+ implantation (As‐imp) at the bottom electrode (BE) in TiN/Hf0.5Zr0.5O2(HZO)/TiN capacitors is proposed. The HZO film shows excellent ferroelectricity and improves endurance at the annealing temperatures of 350 and 400 °C, especially when the dose of As‐imp is 1 × 1016, where the endurance of the HZO film is up to 1.5 × 1011, and the remnant polarization (Pr) far exceeds the reference capacitor without BE As‐imp, where 2Pr is greater than 40 °C cm−2 after 1.5 × 1011 cycles. The underlying physical mechanism is that the oxidation reaction of introduced As5+ during the film deposition releases extra oxygen atoms to fill the oxygen vacancies (Vo) near the BE interface due to the occurrence of the thermal reduction reaction in the subsequent annealing process. This study paves the way for the integration of HZO‐based ferroelectric embedded memory in future high‐performance and energy‐efficient 3D‐ICs.

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Section: Resultssupporting

confidence: 59%

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Tian

Yin

et al. 2022

Adv Materials Inter

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“…Among the devices that mimic biological synapses, ferroelectric field-effect transistors (FeFETs) are known to have the advantages of being quickly programmable with a single transistor (1T) structure, a large on/off ratio, and symmetrical potentiation and depression data. Recently, many studies have aimed to apply HfO 2 family materials to FeFETs to address scaling issues. , However, in the HfO 2 family in which HfO 2 is doped with Zr or Y, there is a problem in that the doping concentration and tensile strength are affected according to the type of substrate. − Thus, there is still a problem in forming a stable ferroelectric phase of HfO 2 . By contrast, PZT has a perovskite structure and ferroelectricity due to the displacement of the atom located at the B site, as shown in Figure a .…”

Section: Introductionmentioning

confidence: 99%

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

Lee

Park

et al. 2023

ACS Appl. Electron. Mater.

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Neuromorphic computing systems that mimic the human brain have recently attracted substantial attention because they allow for the efficient processing of large amounts of data. These systems are composed of neurons and synapses to transfer information; synapses play a particularly important role in transmitting and integrating processed signals between the neurons. The ferroelectric field-effect transistors (FeFETs) can meet the required properties of artificial synaptic devices because the channel current can be controlled with changes in applied gate voltage due to two stable polarization states, meaning that the data can be memorized in various states. In this study, the epitaxial Pb(Zr0.20Ti0.80)O3 (PZT) film was grown on La0.67Sr0.33MnO3 (LSMO) buffered SrTiO3 (STO) single crystal substrate using pulsed laser deposition (PLD). As the channel layer, the amorphous indium gallium zinc oxide (a-IGZO) was employed due to its large carrier mobility and good uniformity. The epitaxially grown single-crystal PZT thin film has a residual polarization (P r) value of 20.2 μC/cm2 and the a-IGZO thin film transistor has a carrier mobility of 10.23 cm2/V s. The biological synaptic behaviors were emulated using the fabricated FeFETs based on the PZT and a-IGZO thin film as a gate insulator and channel material, respectively. The synaptic plasticity was analyzed according to the applied voltage pulse condition. The calculated nonlinearity values were 0.00 and 5.41 with 16 pulse numbers and 0.51 and 7.05 with 32 pulse numbers for potentiation and depression, respectively.

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“…The HfZrO‐10, HfAlO‐10, and HfAlO‐20 thin films displayed a polycrystalline nature, as shown in Figure . The peaks centered at 30.6° and 35.5° in all the three types of thin films are assigned to the o‐phase of (111) and (200) orientations, which coincide with the ferroelectric behavior . The peaks centered at 17.5°, 28.7°, and 55.7° in HfAlO‐20 thin films are associated with the m‐phase, which is the most stable form under usual conditions and coincides with the nonferroelectric phase .…”

Section: Resultsmentioning

confidence: 83%

A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO₂‐Based Ferroelectric Memory

Zhang

Long

et al. 2020

Physica Status Solidi (b)

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The γ‐ray total dose radiation effects on Zr‐doped HfO2 (HfZrO) and Al‐doped HfO2 (HfAlO) ferroelectric thin films are comparatively studied. The J–E, P–E, C–V, εr–f curves and fatigue characteristics of both HfZrO and HfAlO thin films are measured and analyzed with the increasing total dose from 0 to 5 Mrad (Si). The remnant polarization (Pr) values of both HfZrO and HfAlO thin films first decrease and then increase with the increasing total dose. A competitive mechanism between the pinned domains and increasing polarization switching charges induced by radiation is proposed to explain this phenomenon. This work presents doped HfO2 film with great radiation tolerance for nuclear and aerospace applications.

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Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Cited by 14 publications

References 13 publications

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO₂‐Based Ferroelectric Memory

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Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Cited by 14 publications

References 13 publications

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO2‐Based Ferroelectric Memory

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Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO₂‐Based Ferroelectric Memory