Investigation on nanotube-metal contacts under different contact types

Chen, Changxin; Zhang, Wei; Wei, Liangming; Su, Yanjie; Hu, Nantao; Wang, Ying; Li, Yong; Zhong, Han-qing; Liu, Yijian; Liu, Xiaodong; Liu, Xinran; Zhang, Yafei

doi:10.1016/j.matlet.2015.01.045

Cited by 5 publications

(1 citation statement)

References 18 publications

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“…A sensible modeling of a practical electron-transport device must meet the following requirements: − (1) good contact with metallic electrodes; (2) three major factors to determine the electronic transparency of contacts, that is, favorable interface geometry and bonding, the electronic density of states, and the potential barrier at the interface; and (3) the top contact with electrode (because contacting a single layer from side of electrodes is insufficient for good electron injection). We note that Guo and coworkers have investigated different metals as contact with monolayer BP for future device application.…”

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confidence: 99%

Electron-Transport Properties of Few-Layer Black Phosphorus

Dai

Zeng

2015

J. Phys. Chem. Lett.

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We perform the first-principles computational study of the effect of number of stacking layers and stacking style of the few-layer black phosphorus (BPs) on the electronic properties, including transport gap, current-voltage (i-v) relation, and differential conductance. Our computation is based on the nonequilibrium Green's function approach combined with density functional theory calculations. Specifically, we compute electron-transport properties of monolayer BP, bilayer BP, and trilayer BP as well as bilayer BPs with AB-, AA-, or AC-stacking. We find that the stacking number has greater influence on the transport gap than the stacking type. Conversely, the stacking type has greater influence on i-v curve and differential conductance than on the transport gap. This study offers useful guidance for determining the number of stacking layers and the stacking style of few-layer BP sheets in future experimental measurements and for potential applications in nanoelectronic devices.

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confidence: 99%