Investigation on Mn doped ZnO thin films grown by RF magnetron sputtering

Elanchezhiyan, J.; Bhuvana, K.P.; Gopalakrishnan, N.; Balasubramanian, T.

doi:10.1016/j.matlet.2008.03.013

Cited by 36 publications

(12 citation statements)

References 20 publications

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“…This can be explained by the ferromagneticantiferromagnetic competition, saying that at higher concentrations may be ascribed to an increasing occurrence of antiferromagnetic coupling for Mn pairs happening at shorter separation distances, leading to a decreasing the ferromagnetic interaction, which was reported in the literature previously also [38,50,61].…”

Section: Resultsmentioning

confidence: 56%

Structural, optical and magnetic properties of Zn1−xMnxO micro-rod arrays synthesized by spray pyrolysis method

et al. 2012

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Undoped and Mn-doped ZnO micro-rod arrays were fabricated by the spray pyrolysis method on glass substrates. X-ray diffraction and scanning electron microscopy showed that these micro-rod arrays had a polycrystalline wurtzite structure and high c-axis preferred orientation.Photoluminescence studies at 10 K show that the increase of manganese content leads to a relative decrease in deep level band intensity with respect to undoped ZnO. Magnetic measurements indicated that undoped ZnO was diamagnetic in nature whereas Mn-doped ZnO samples exhibited ferromagnetic behavior at room temperature, which is possibly related to the substitution of Mn ions (Mn 2+ ) for Zn ions in the ZnO lattice.

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Section: Resultsmentioning

confidence: 56%

Structural, optical and magnetic properties of Zn1−xMnxO micro-rod arrays synthesized by spray pyrolysis method

et al. 2012

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“…The hysteresis loops in Figures 1 and 3 indicate the presence of ferromagnetism in the Mn:ZnO and Cu:ZnO films. Although FM has been predicted and observed experimentally in Mn:ZnO, a discord exists in the reported justifications [25,26]. Likewise, the origins of ferromagnetism in Cu:ZnO remain unidentified as neither Cu nor ZnO is intrinsically magnetic, meaning that one defect type must exist to induce the magnetic moments and another to mediate them.…”

Section: Resultsmentioning

confidence: 99%

“…Doppler broadening of PAS measurements was performed using monoenergetic positron beams in the 0.2 keV to 30 keV range at the positron facility Helmholtz-Zentrum Dresden-Rossendorf (HZDR) in Dresden, Germany. The 511 keV annihilation peak for each beam energy was recorded using a high purity Ge detector, and the S and W defect parameters [25] were obtained from the annihilation peak. The structural and optical properties of the Al-Co:ZnO sample, X-ray diffraction (XRD), and ultraviolet-visible (UV-VIS) spectroscopic measurements were carried out at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Observation of Negative Magnetic Hysteresis Loop in ZnO Thin Films

Haseman

Saadatkia

Winarski

et al. 2018

Journal of Spectroscopy

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We report on the observation of an unusual negative magnetic hysteresis loop in ZnO thin film codoped with cobalt and aluminum (Co-Al:ZnO), while other transition-metal-doped ZnO films, such as Cu-doped ZnO and Mn-doped ZnO, exhibit normal hysteresis loops. The unusual magnetic behavior is ascribed to the presence of double magnetic layers with different magnetic moments due to the change of structural defects across the film layers. Positron annihilation measurements confirmed the presence of unique microstructural changes in the Co-Al:ZnO film. This study shows that defects in diluted magnetic semiconductors may induce not only ferromagnetism but also novel magnetic behaviors.

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“…35 The 4.0 at.% Mn-doped ZnO film has the highest saturation magnetization because the distance between Mn 2+ ions is optimized, which induces an adequate exchange interaction so as to enhance the magnetization. 36,37 Furthermore, the carrier concentrations and magnetizations decrease with increasing Mn concentration. Thus, ferromagnetism in Mn-doped ZnO film can be expected in terms of carrier-mediated exchange coupling between the localized spins of the transition-metal ions.…”

Section: Magnetic Propertiesmentioning

confidence: 99%

The Transparent Conductive Properties of Manganese-Doped Zinc Oxide Films Deposited by Chemical Bath Deposition

Fang

Luo

Hsu

et al. 2011

Journal of Elec Materi

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Manganese-doped zinc oxide (Mn-doped ZnO) thin films were prepared using chemical bath deposition (CBD), and the impacts of the manganese dopant concentration on the structure, electrical resistivity, optical transmission, and magnetic properties were investigated using x-ray diffractometry, Hall-effect measurements, ultraviolet-visible-near-infrared (UV-Vis-IR) spectrophotometry, and vibrating sample magnetometry (VSM), respectively. The concentration of the manganese dopant in the ZnO thin film critically impacted the resulting properties, and the 4.0 at.% Mn-doped ZnO film had a resistivity of 5.8 9 10 À2 Xcm, transmittance of 75.6% in the visible light range, and bandgap of 3.30 eV when the film was annealed at 600°C in an Ar + H 2 atmosphere. Annealing the film could enhance its magnetic properties such that the film had a saturation magnetization of 21.0 emu/cm 3 and a coercivity of 45.7 Oe after annealing at 600°C. Because of these electrical, optical, and magnetic properties, Mn-doped thin films are promising for use in spintronic devices.

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Investigation on Mn doped ZnO thin films grown by RF magnetron sputtering

Cited by 36 publications

References 20 publications

Structural, optical and magnetic properties of Zn1−xMnxO micro-rod arrays synthesized by spray pyrolysis method

Structural, optical and magnetic properties of Zn1−xMnxO micro-rod arrays synthesized by spray pyrolysis method

Observation of Negative Magnetic Hysteresis Loop in ZnO Thin Films

The Transparent Conductive Properties of Manganese-Doped Zinc Oxide Films Deposited by Chemical Bath Deposition

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