Investigation on microstructures of MnSi_x thin films by Raman spectroscopy

Abstract

In this paper, Raman spectroscopy is used to study the microstructures of MnSi x thin films annealed at different temperatures. Two phases of Mn silicides, MnSi 1.73 and MnSi, are identified, and their Raman spectra are reported. Each phase of Mn silicides shows a set of three well-defined peaks at about 300 cm −1 in the spectrum, which could be used as fingerprints in identifying the formation of the Mn silicides. Compared with conventional X-ray diffraction method, Raman spectroscopy is found to be more sensitive to investigate the microstructures of Mn silicides, especially at the initial stage of formation of the Mn silicides.

Enhancement of thermoelectric power factor of MnSi1.7 films by Si addition and modulation doping

“…Figure 2 shows the Raman spectra of (a) the pure MnSi 1.7 film (sample A0), and (b) the silicon‐added MnSi 1.7 film (sample A40) in the range 100–600 cm −1 . Three peaks can be clearly seen at about 300 cm −1 , indicating the formation of the crystalline MnSi 1.7 phase 30, 31. The three Raman peaks should account for the slightly different neighborhoods of the MnSi bonds.…”

Recent advances in linear and nonlinear Raman spectroscopy. Part IV

“…A computer-aided methodology was used by Nolasco et al [234] to assign the vibrational spectra of molecular materials, and has been successfully applied to the Raman and IR spectra of trans-cinnamic acid in the solid state. Wang et al [235] probed the microstructures of MnSi x thin films by Raman spectroscopy. Raman scattering measurements were performed by Castro et al [236] for Ba 2 BiSbO 6 ceramics in the temperature range from 10 to 573 K. The Raman spectra were examined using group theory to analyze the decomposition of the reducible representation of the vibrational modes and with a virtual octahedral model.…”