Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

He, Yan; Yuan, Zewei; Song, Shuyuan; Deng, Wei

doi:10.1007/s12541-021-00494-1

Cited by 25 publications

(17 citation statements)

References 27 publications

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“…H s is 46.36 GPa, H f is 10 GPa, E s is 400 GPa, t is 5 nm. 12 Simulation results of hardness value with indentation depth is shown in Figure 17. The simulation curve of the composite hardness value better fits the microhardness of the silicon carbide wafer containing oxide layer.…”

Section: Resultsmentioning

confidence: 99%

“…By comparing the material removal effects, it is determined that the single increase of mechanical action or chemical action cannot continuously increase the material removal rate in the process of PCMP. 12 Due to the experimental study of PCMP on the macroscopic scale, so it is inappropriate to explain the polished effect of chemical reaction and mechanical abrasion on the nanometric scale. In addition, the experimental study of atomic force microscopy (AFM) could not reveal the dynamic details of nanofinishing SiC.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Yuan

Tang

et al. 2022

Proceedings of the Institution of Mechanical Engineers, Part C:

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Single-crystal SiC has become the third-generation semiconductor material with the most development potential due to its many outstanding physical and chemical properties, but excellent surface quality is the prerequisite for its application. Therefore, atomic mechanism of chemical and mechanical mutual promotion in hydroxyl radical ·OH aqueous was researched through reactive molecular dynamics simulation for obtaining nano-smoothed surface with photocatalysis-assisted chemical mechanical polishing (PCMP). The behavior of nanoparticles promoting chemical reaction during the nanofinishing process was studied vias a single abrasive sliding on the surface of SiC. A combination method of mechanical action and chemical action was adopted to compare effect of material oxidation and material removal. Si/C atoms are mainly fractured or escaped in the forms of SiO, CO, chain, SiO2, and CO2, and more residual oxidation products were observed on the substrate. Furthermore, XPS and nanoindentation results also support the mechanism of chemical and mechanical mutual promotion in PCMP through the detection of the oxidized products and surface hardness. This process activated and removed the SiC materials and generated a smooth and non-damaged surface (Ra 0.269 nm and Rmax 0.807 nm). The research results may reveal the removal mechanism of Si/C atoms, and provide new theoretical and technical support for the ultra-precision machining of single crystal sapphire, silicon nitride and diamond etc.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Yuan

Tang

et al. 2022

Proceedings of the Institution of Mechanical Engineers, Part C:

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“…As summarized in Table 3 , several efficiency‐enhancing methods concerning Fenton‐like reaction, core/shell abrasive particles, FAP, PCMP, and MAS have been combined to form a hybrid polishing system. [ 43,54,99,102,105,111,134–139 ] It can be seen that the synergistic approaches including Fenton‐like reaction combined with FAP, ECMP combined with core–shell abrasives, and PCMP combined with MAS help simultaneously achieve high MRR and good surface quality ( Ra < 0.5 nm).…”

Section: Status and Challenges Of The Chemical–mechanical Polishing (...mentioning

confidence: 99%

“…As summarized in Table 3, several efficiency-enhancing methods concerning Fenton-like reaction, core/shell abrasive particles, FAP, PCMP, and MAS have been combined to form a hybrid polishing system. [43,54,99,102,105,111,[134][135][136][137][138][139] It can be seen that the synergistic approaches including Fenton-like reaction combined with FAP, ECMP combined with core-shell abrasives, and PCMP combined with MAS help simultaneously achieve high MRR and good surface quality (Ra < 0.5 nm). Since the efficiency of CMP is limited by the oxidation of 4H-SiC, researchers have developed synergistic oxidation approaches such as the plasma-assisted electrochemical oxidation, the ultrasonic-assisted electrochemical oxidation, and the electro-assisted photocatalysis oxidation.…”

Section: Other Synergistic Approachesmentioning

confidence: 99%

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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“…Therefore, domestic and foreign scholars in the field of precise machining have put forward many hybrid machining methods by introducing the external energy field. Electrochemical mechanical polishing (ECMP) [ 8 , 9 ], plasma-assisted polishing [ 10 , 11 ], UV (ultraviolet) photocatalytic-assisted polishing [ 12 , 13 ], laser-induced assisted polishing [ 14 , 15 ], and Fenton oxidation-assisted polishing [ 16 ] were included. In essence, these methods improved the oxidation corrosion performance of SiC by different external energies, which made the material easy to be removed.…”

Section: Introductionmentioning

confidence: 99%

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Shi

Zhao

et al. 2021

Materials

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Silicon carbide (SiC) devices have become one of the key research directions in the field of power electronics. However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such as SiC MOSFET (Metal-oxide-semiconductor Field-effect Transistor), are facing the problems of high cost and unsatisfied performance. To improve the precise machinability of single-crystal SiC wafer, this paper proposed a new hybrid process. Firstly, we developed an ultrasonic vibration-assisted device, by which ultrasonic-assisted lapping and ultrasonic-assisted CMP (chemical mechanical polishing) for SiC wafer were fulfilled. Secondly, a novel three-step ultrasonic-assisted precise machining route was proposed. In the first step, ultrasonic lapping using a cast iron disc was conducted, which quickly removed large surface damages with a high MRR (material removal rate) of 10.93 μm/min. In the second step, ultrasonic lapping using a copper disc was conducted, which reduced the residual surface defects with a high MRR of 6.11 μm/min. In the third step, ultrasonic CMP using a polyurethane pad was conducted, which achieved a smooth and less damaged surface with an MRR of 1.44 μm/h. These results suggest that the ultrasonic-assisted hybrid process can improve the precise machinability of SiC, which will hopefully achieve high-efficiency and ultra-precision machining.

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Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Cited by 25 publications

References 27 publications

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

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